中文
English
IXFH40N30Q-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IXFH40N30Q-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, which is very suitable for high voltage applications. The maximum leakage current of this MOSFET is 47A, the gate-source voltage range is ±30V, and the threshold voltage is 3.5V. Its on-resistance is only 75mΩ (at VGS=10V), which makes it perform well in the field of power management and switch control, and can meet the needs of high efficiency and high performance.
**IXFH40N30Q-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, which is very suitable for high voltage applications. The maximum leakage current of this MOSFET is 47A, the gate-source voltage range is ±30V, and the threshold voltage is 3.5V. Its on-resistance is only 75mΩ (at VGS=10V), which makes it perform well in the field of power management and switch control, and can meet the needs of high efficiency and high performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH40N30Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH40N30Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: IXFH40N30Q-VB can be used as the main switching element in the switching power supply design, which can efficiently control the power conversion, optimize the output performance, reduce the energy loss, and is suitable for various power adapters and power modules.
2. **Electric vehicle charging system**: This MOSFET is very suitable for the charger of electric vehicles, which can handle high current and high voltage, ensure fast and stable charging process and improve charging efficiency.
3. **Motor drive**: In the motor control system, IXFH40N30Q-VB can effectively regulate the starting and running of the motor, provide smooth current control, and is suitable for industrial automation, robotics and household appliances.
4. **Renewable energy inverter**: This MOSFET is suitable for solar inverter and wind power generation system, supporting efficient energy conversion and stable output, ensuring the effective use of renewable energy.
Through these application examples, we can see the wide applicability of IXFH40N30Q-VB in high voltage and high current environments, meeting the requirements of modern electronic equipment for high performance and high reliability.
1. **Switching power supply**: IXFH40N30Q-VB can be used as the main switching element in the switching power supply design, which can efficiently control the power conversion, optimize the output performance, reduce the energy loss, and is suitable for various power adapters and power modules.
2. **Electric vehicle charging system**: This MOSFET is very suitable for the charger of electric vehicles, which can handle high current and high voltage, ensure fast and stable charging process and improve charging efficiency.
3. **Motor drive**: In the motor control system, IXFH40N30Q-VB can effectively regulate the starting and running of the motor, provide smooth current control, and is suitable for industrial automation, robotics and household appliances.
4. **Renewable energy inverter**: This MOSFET is suitable for solar inverter and wind power generation system, supporting efficient energy conversion and stable output, ensuring the effective use of renewable energy.
Through these application examples, we can see the wide applicability of IXFH40N30Q-VB in high voltage and high current environments, meeting the requirements of modern electronic equipment for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
