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IXFH36N60P-VB Product details
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Product Introduction: IXFH36N60P-VB
IXFH36N60P-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach 650V and can handle leakage currents up to 47A. This device has a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 75mΩ at VGS=10V, ensuring excellent performance in high-efficiency and low-energy applications. IXFH36N60P-VB uses SJ_Multi-EPI technology, providing excellent thermal performance and switching characteristics for high-frequency and high-power electronic applications.
IXFH36N60P-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach 650V and can handle leakage currents up to 47A. This device has a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 75mΩ at VGS=10V, ensuring excellent performance in high-efficiency and low-energy applications. IXFH36N60P-VB uses SJ_Multi-EPI technology, providing excellent thermal performance and switching characteristics for high-frequency and high-power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH36N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH36N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage power converters**:
The IXFH36N60P-VB is ideal for high-voltage switching power supplies and DC-DC converters. Its low on-resistance reduces energy loss and improves power conversion efficiency, especially in high-frequency applications.
2. **Motor drive systems**:
In industrial and automotive motor control, this MOSFET can be used as a switching element in motor drives. Its high current capability and stable performance enable it to operate reliably under high load conditions, adapting to the needs of fast start-stop and speed regulation.
3. **Electric vehicle chargers**:
The IXFH36N60P-VB is suitable for electric vehicle chargers, especially in fast charging systems, where it can safely and efficiently handle high currents, improve charging speed and efficiency, and meet the market demand for high-efficiency charging.
4. **Renewable Energy Inverter**:
This device can be used in photovoltaic inverters and wind power generation systems to support the conversion of DC power to AC power for use in the power grid or load. Its high-voltage capability ensures reliable operation under unstable power conditions.
Through these application examples, the wide applicability and excellent performance of the IXFH36N60P-VB in high-voltage and high-power electronic devices are demonstrated.
1. **High-voltage power converters**:
The IXFH36N60P-VB is ideal for high-voltage switching power supplies and DC-DC converters. Its low on-resistance reduces energy loss and improves power conversion efficiency, especially in high-frequency applications.
2. **Motor drive systems**:
In industrial and automotive motor control, this MOSFET can be used as a switching element in motor drives. Its high current capability and stable performance enable it to operate reliably under high load conditions, adapting to the needs of fast start-stop and speed regulation.
3. **Electric vehicle chargers**:
The IXFH36N60P-VB is suitable for electric vehicle chargers, especially in fast charging systems, where it can safely and efficiently handle high currents, improve charging speed and efficiency, and meet the market demand for high-efficiency charging.
4. **Renewable Energy Inverter**:
This device can be used in photovoltaic inverters and wind power generation systems to support the conversion of DC power to AC power for use in the power grid or load. Its high-voltage capability ensures reliable operation under unstable power conditions.
Through these application examples, the wide applicability and excellent performance of the IXFH36N60P-VB in high-voltage and high-power electronic devices are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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