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IXFH36N55Q-VB Product details
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Product Introduction
**IXFH36N55Q-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The device adopts SJ_Multi-EPI technology, has excellent conduction characteristics and thermal performance, and can work stably in various power electronics and industrial applications. Its maximum drain-source voltage of 500V and low on-resistance of 80mΩ make it perform well in high voltage environments and suitable for a wide range of industrial needs.
**IXFH36N55Q-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The device adopts SJ_Multi-EPI technology, has excellent conduction characteristics and thermal performance, and can work stably in various power electronics and industrial applications. Its maximum drain-source voltage of 500V and low on-resistance of 80mΩ make it perform well in high voltage environments and suitable for a wide range of industrial needs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH36N55Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Model**: IXFH36N55Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power converter**: IXFH36N55Q-VB is widely used in power converters, including DC-DC converters and AC-DC power supplies, providing stable solutions for high voltage and high efficiency.
2. **Industrial automation**: This MOSFET is suitable for motor drive and power management in industrial control systems, ensuring reliability and stability under high load conditions to meet the needs of modern industrial equipment.
3. **Electric vehicles**: In the battery management system (BMS) and electric drive system of electric and hybrid vehicles, IXFH36N55Q-VB can handle high voltage requirements to ensure system safety and high efficiency.
4. **Welding equipment**: The high voltage capability of the device makes it suitable for welding and arc cutting equipment, providing reliable switching control and improving equipment performance.
5. **Consumer Electronics**: IXFH36N55Q-VB can also be used in high-voltage power modules and smart home devices to improve energy efficiency and meet the high performance and reliability requirements of modern electronic products.
With its excellent electrical characteristics, IXFH36N55Q-VB has become a high-efficiency solution in a variety of industries, able to meet the needs of different application scenarios.
1. **Power converter**: IXFH36N55Q-VB is widely used in power converters, including DC-DC converters and AC-DC power supplies, providing stable solutions for high voltage and high efficiency.
2. **Industrial automation**: This MOSFET is suitable for motor drive and power management in industrial control systems, ensuring reliability and stability under high load conditions to meet the needs of modern industrial equipment.
3. **Electric vehicles**: In the battery management system (BMS) and electric drive system of electric and hybrid vehicles, IXFH36N55Q-VB can handle high voltage requirements to ensure system safety and high efficiency.
4. **Welding equipment**: The high voltage capability of the device makes it suitable for welding and arc cutting equipment, providing reliable switching control and improving equipment performance.
5. **Consumer Electronics**: IXFH36N55Q-VB can also be used in high-voltage power modules and smart home devices to improve energy efficiency and meet the high performance and reliability requirements of modern electronic products.
With its excellent electrical characteristics, IXFH36N55Q-VB has become a high-efficiency solution in a variety of industries, able to meet the needs of different application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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