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IXFH32N50-VB Product details
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Product Introduction
**IXFH32N50-VB** is a high-performance N-channel MOSFET in a TO247 package, designed for medium-to-high voltage and high-power applications. Its maximum drain-source voltage (VDS) is 500V, suitable for a variety of high-voltage power electronics applications. The device has an on-resistance (RDS(ON)) of 80mΩ (@VGS = 10V), which performs well under high current conditions (ID up to 40A), effectively reducing power losses. IXFH32N50-VB uses SJ_Multi-EPI technology to provide excellent thermal performance and electrical characteristics, ensuring reliability and stability under high load environments.
**IXFH32N50-VB** is a high-performance N-channel MOSFET in a TO247 package, designed for medium-to-high voltage and high-power applications. Its maximum drain-source voltage (VDS) is 500V, suitable for a variety of high-voltage power electronics applications. The device has an on-resistance (RDS(ON)) of 80mΩ (@VGS = 10V), which performs well under high current conditions (ID up to 40A), effectively reducing power losses. IXFH32N50-VB uses SJ_Multi-EPI technology to provide excellent thermal performance and electrical characteristics, ensuring reliability and stability under high load environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH32N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH32N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFH32N50-VB is very suitable for switching power supply (SMPS) design. Its high voltage handling capability and low on-resistance can significantly improve the power conversion efficiency. It is widely used in computer power supply, industrial power supply and telecommunication equipment.
2. **Motor drive**: This MOSFET performs well in motor control systems and is suitable for the control of brushless DC motors and stepper motors to achieve efficient start-stop and speed regulation. It is particularly suitable for automation equipment and electric vehicles.
3. **Inverter**: IXFH32N50-VB can efficiently process electrical energy in photovoltaic inverters and other power conversion equipment, ensuring stability under high voltage environments. It is widely used in renewable energy systems such as solar and wind energy.
4. **Lighting control**: In LED drive and intelligent lighting systems, this device can achieve efficient switching control, improve overall energy efficiency and extend the service life of lamps, and is suitable for modern intelligent lighting solutions.
Overall, the IXFH32N50-VB is an ideal choice for high voltage power electronics design due to its excellent performance and wide application range, and can meet the needs of a variety of industrial and commercial applications.
1. **Switching power supply**: IXFH32N50-VB is very suitable for switching power supply (SMPS) design. Its high voltage handling capability and low on-resistance can significantly improve the power conversion efficiency. It is widely used in computer power supply, industrial power supply and telecommunication equipment.
2. **Motor drive**: This MOSFET performs well in motor control systems and is suitable for the control of brushless DC motors and stepper motors to achieve efficient start-stop and speed regulation. It is particularly suitable for automation equipment and electric vehicles.
3. **Inverter**: IXFH32N50-VB can efficiently process electrical energy in photovoltaic inverters and other power conversion equipment, ensuring stability under high voltage environments. It is widely used in renewable energy systems such as solar and wind energy.
4. **Lighting control**: In LED drive and intelligent lighting systems, this device can achieve efficient switching control, improve overall energy efficiency and extend the service life of lamps, and is suitable for modern intelligent lighting solutions.
Overall, the IXFH32N50-VB is an ideal choice for high voltage power electronics design due to its excellent performance and wide application range, and can meet the needs of a variety of industrial and commercial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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