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IXFH320N10T2-VB Product details
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IXFH320N10T2-VB Product Introduction
IXFH320N10T2-VB is a high-efficiency power MOSFET in TO247 package, designed for high current applications. The device has a drain-source withstand voltage of 100V and can withstand a maximum drain current of up to 320A, suitable for applications requiring high current and low conduction loss. It uses Trench technology and has an ultra-low on-resistance (2mΩ @ VGS=10V), which effectively improves system efficiency and reduces heat loss, and is widely used in various power conversion and management systems.
IXFH320N10T2-VB is a high-efficiency power MOSFET in TO247 package, designed for high current applications. The device has a drain-source withstand voltage of 100V and can withstand a maximum drain current of up to 320A, suitable for applications requiring high current and low conduction loss. It uses Trench technology and has an ultra-low on-resistance (2mΩ @ VGS=10V), which effectively improves system efficiency and reduces heat loss, and is widely used in various power conversion and management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH320N10T2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 320A
- **Technology**: Trench
- **Model**: IXFH320N10T2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 320A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-efficiency power conversion**: IXFH320N10T2-VB is commonly used in high-efficiency power conversion modules, such as switching power supplies and power adapters, to achieve excellent power conversion efficiency and reduce energy loss under high-frequency operation.
2. **Electric vehicles**: In the power management system of electric vehicles, this MOSFET can be used for motor drive and battery management, providing high current handling capabilities to ensure stable performance of electric vehicles under high loads.
3. **Servers and data centers**: Due to its high current capability and low conduction loss, this device is suitable for server power supply and data center applications, improving the energy efficiency of the system and reducing the overall operating cost.
4. **Industrial automation**: IXFH320N10T2-VB can also be used in industrial automation equipment, supporting high current drive and fast switching, suitable for various electrical control and drive systems.
With its excellent performance and diverse application scenarios, IXFH320N10T2-VB becomes an important choice for efficient power management and conversion.
1. **High-efficiency power conversion**: IXFH320N10T2-VB is commonly used in high-efficiency power conversion modules, such as switching power supplies and power adapters, to achieve excellent power conversion efficiency and reduce energy loss under high-frequency operation.
2. **Electric vehicles**: In the power management system of electric vehicles, this MOSFET can be used for motor drive and battery management, providing high current handling capabilities to ensure stable performance of electric vehicles under high loads.
3. **Servers and data centers**: Due to its high current capability and low conduction loss, this device is suitable for server power supply and data center applications, improving the energy efficiency of the system and reducing the overall operating cost.
4. **Industrial automation**: IXFH320N10T2-VB can also be used in industrial automation equipment, supporting high current drive and fast switching, suitable for various electrical control and drive systems.
With its excellent performance and diverse application scenarios, IXFH320N10T2-VB becomes an important choice for efficient power management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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