中文
English
IXFH30N60P-VB Product details
Back to previous pageProduct introduction：
Product Introduction: IXFH30N60P-VB
IXFH30N60P-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for use in demanding electrical environments, and can handle a maximum leakage current of 20A. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 160mΩ at VGS=10V, ensuring high efficiency and low energy consumption. IXFH30N60P-VB uses SJ_Multi-EPI technology, providing excellent thermal performance and switching characteristics, and is very suitable for high-frequency applications.
IXFH30N60P-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for use in demanding electrical environments, and can handle a maximum leakage current of 20A. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 160mΩ at VGS=10V, ensuring high efficiency and low energy consumption. IXFH30N60P-VB uses SJ_Multi-EPI technology, providing excellent thermal performance and switching characteristics, and is very suitable for high-frequency applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH30N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH30N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage power converters**:
The IXFH30N60P-VB is ideally suited for the design of high-voltage switching power supplies and DC-DC converters, efficiently converting input voltages to regulated output voltages. Its low on-resistance helps reduce energy losses, improve conversion efficiency, and reduce system heat.
2. **Motor drive systems**:
In motor control applications, this MOSFET can be used as a switching element for motor drivers. Its high voltage and high current capabilities enable it to support efficient motor control, meeting the needs of industrial automation and robotics.
3. **Electric vehicle charging systems**:
The IXFH30N60P-VB is suitable for use in electric vehicle chargers, especially in fast-charging equipment. Its high voltage capability ensures that it can safely and efficiently handle large amounts of current during charging, increasing charging speeds.
4. **Renewable Energy Inverters**:
This MOSFET can also be used in photovoltaic inverters and wind power generation systems to help convert DC power from renewable energy into AC power. Its high voltage characteristics and reliability ensure stable operation in various climate conditions.
Through these application examples, the wide applicability and excellent performance of the IXFH30N60P-VB in high-voltage and high-power electronic devices are demonstrated.
1. **High-voltage power converters**:
The IXFH30N60P-VB is ideally suited for the design of high-voltage switching power supplies and DC-DC converters, efficiently converting input voltages to regulated output voltages. Its low on-resistance helps reduce energy losses, improve conversion efficiency, and reduce system heat.
2. **Motor drive systems**:
In motor control applications, this MOSFET can be used as a switching element for motor drivers. Its high voltage and high current capabilities enable it to support efficient motor control, meeting the needs of industrial automation and robotics.
3. **Electric vehicle charging systems**:
The IXFH30N60P-VB is suitable for use in electric vehicle chargers, especially in fast-charging equipment. Its high voltage capability ensures that it can safely and efficiently handle large amounts of current during charging, increasing charging speeds.
4. **Renewable Energy Inverters**:
This MOSFET can also be used in photovoltaic inverters and wind power generation systems to help convert DC power from renewable energy into AC power. Its high voltage characteristics and reliability ensure stable operation in various climate conditions.
Through these application examples, the wide applicability and excellent performance of the IXFH30N60P-VB in high-voltage and high-power electronic devices are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
