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IXFH30N50-VB Product details
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Product Introduction
**IXFH30N50-VB** is a high-efficiency single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The device adopts SJ_Multi-EPI technology, providing excellent conduction characteristics and switching performance, suitable for use in a variety of power electronics and industrial applications. Its maximum drain-source voltage of 500V and low on-resistance enable it to have excellent performance and reliability in high voltage environments.
**IXFH30N50-VB** is a high-efficiency single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The device adopts SJ_Multi-EPI technology, providing excellent conduction characteristics and switching performance, suitable for use in a variety of power electronics and industrial applications. Its maximum drain-source voltage of 500V and low on-resistance enable it to have excellent performance and reliability in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH30N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Model**: IXFH30N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **Power converters**: The IXFH30N50-VB is widely used in various power converters, such as DC-DC converters and AC-DC power supplies, to provide high efficiency and low loss under high voltage and high current conditions.
2. **Industrial automation**: This MOSFET is widely used in industrial control systems, especially in motor drives and programmable logic controllers (PLCs), to ensure stable operation of equipment under high loads.
3. **Electric vehicles**: In electric and hybrid vehicles, the IXFH30N50-VB is used in battery management systems (BMS) and electric drive systems to ensure safety and high efficiency in high voltage environments.
4. **Welding equipment**: Due to its high voltage capability, the device is suitable for welding and cutting equipment, providing reliable switching control and efficient energy conversion.
5. **Consumer Electronics**: IXFH30N50-VB can also be used in high-voltage power modules and smart home devices to improve energy efficiency and meet the high performance and reliability requirements of modern consumer electronics.
With its excellent electrical characteristics, IXFH30N50-VB is an ideal choice for high-performance solutions in multiple industries and can meet the needs of various application scenarios.
1. **Power converters**: The IXFH30N50-VB is widely used in various power converters, such as DC-DC converters and AC-DC power supplies, to provide high efficiency and low loss under high voltage and high current conditions.
2. **Industrial automation**: This MOSFET is widely used in industrial control systems, especially in motor drives and programmable logic controllers (PLCs), to ensure stable operation of equipment under high loads.
3. **Electric vehicles**: In electric and hybrid vehicles, the IXFH30N50-VB is used in battery management systems (BMS) and electric drive systems to ensure safety and high efficiency in high voltage environments.
4. **Welding equipment**: Due to its high voltage capability, the device is suitable for welding and cutting equipment, providing reliable switching control and efficient energy conversion.
5. **Consumer Electronics**: IXFH30N50-VB can also be used in high-voltage power modules and smart home devices to improve energy efficiency and meet the high performance and reliability requirements of modern consumer electronics.
With its excellent electrical characteristics, IXFH30N50-VB is an ideal choice for high-performance solutions in multiple industries and can meet the needs of various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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