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IXFH30N50P-VB Product details
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Product Introduction
IXFH30N50P-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, enabling it to operate stably in high voltage environments. The device's gate-source voltage (VGS) range is ±30V, and the turn-on voltage threshold (Vth) is 3.8V, ensuring fast switching response. The on-resistance (RDS(ON)) of IXFH30N50P-VB at a gate voltage of 10V is 80mΩ, and the maximum drain current (ID) can reach 40A. It uses SJ_Multi-EPI technology to optimize the device's conductive performance and thermal management.
IXFH30N50P-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, enabling it to operate stably in high voltage environments. The device's gate-source voltage (VGS) range is ±30V, and the turn-on voltage threshold (Vth) is 3.8V, ensuring fast switching response. The on-resistance (RDS(ON)) of IXFH30N50P-VB at a gate voltage of 10V is 80mΩ, and the maximum drain current (ID) can reach 40A. It uses SJ_Multi-EPI technology to optimize the device's conductive performance and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH30N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.8V
- **On-resistance (RDS(ON) @ VGS=10V)**: 80mΩ
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH30N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.8V
- **On-resistance (RDS(ON) @ VGS=10V)**: 80mΩ
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
IXFH30N50P-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for efficient switching power supplies and DC-DC converters, and can optimize energy conversion under high voltage conditions, especially suitable for industrial and commercial power applications.
2. **Motor drive**: The IXFH30N50P-VB can provide stable current for motor control systems, suitable for the driving needs of various industrial automation equipment and household appliances.
3. **Renewable energy equipment**: Due to its high voltage and high current characteristics, this device is particularly suitable for photovoltaic inverters and wind power generation systems, helping to improve energy conversion efficiency and system reliability.
4. **Lighting control system**: In the LED drive circuit, the IXFH30N50P-VB can effectively control the current, improve the performance and stability of the high-voltage lighting system, and is suitable for a variety of lighting applications.
Through these application examples, the high voltage and high current characteristics of IXFH30N50P-VB make it an ideal choice in multiple high-performance electrical equipment.
IXFH30N50P-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for efficient switching power supplies and DC-DC converters, and can optimize energy conversion under high voltage conditions, especially suitable for industrial and commercial power applications.
2. **Motor drive**: The IXFH30N50P-VB can provide stable current for motor control systems, suitable for the driving needs of various industrial automation equipment and household appliances.
3. **Renewable energy equipment**: Due to its high voltage and high current characteristics, this device is particularly suitable for photovoltaic inverters and wind power generation systems, helping to improve energy conversion efficiency and system reliability.
4. **Lighting control system**: In the LED drive circuit, the IXFH30N50P-VB can effectively control the current, improve the performance and stability of the high-voltage lighting system, and is suitable for a variety of lighting applications.
Through these application examples, the high voltage and high current characteristics of IXFH30N50P-VB make it an ideal choice in multiple high-performance electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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