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IXFH28N60P3-VB Product details
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IXFH28N60P3-VB Product Introduction
The IXFH28N60P3-VB is a high voltage N-channel power MOSFET in TO247 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 650V and a drain current of up to 20A, the device is suitable for multiple fields such as efficient power management and inverters. The IXFH28N60P3-VB uses SJ_Multi-EPI technology, with low on-resistance and good heat dissipation performance, ensuring stable operation in high voltage environments.
The IXFH28N60P3-VB is a high voltage N-channel power MOSFET in TO247 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 650V and a drain current of up to 20A, the device is suitable for multiple fields such as efficient power management and inverters. The IXFH28N60P3-VB uses SJ_Multi-EPI technology, with low on-resistance and good heat dissipation performance, ensuring stable operation in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH28N60P3-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 160mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH28N60P3-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 160mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply (SMPS)**:
IXFH28N60P3-VB is very suitable for use in high-voltage switching power supplies, providing stable switching performance at high voltage, reducing energy loss, and improving overall energy efficiency.
2. **Photovoltaic inverter**:
This MOSFET can be used in photovoltaic inverters to efficiently convert the DC power of solar cells into AC power, support the use of renewable energy, and promote the development of clean energy.
3. **Motor drive system**:
IXFH28N60P3-VB performs well in motor drive applications, ensuring high efficiency and fast response of the motor under high voltage and high current conditions.
4. **Uninterruptible power supply (UPS)**:
In UPS systems, this MOSFET can be used as a high-voltage switching element to ensure fast switching when power fails to maintain the continuous power supply capability of the equipment.
5. **Industrial Automation and Control**:
IXFH28N60P3-VB can be used for high-voltage switching and current control in industrial automation systems. It is suitable for a variety of high-efficiency industrial equipment to ensure the stability and reliability of the system.
Through these application examples, IXFH28N60P3-VB demonstrates its wide applicability in systems with high voltage and high efficiency requirements, providing reliable performance support for modern power electronic equipment.
1. **High-voltage switching power supply (SMPS)**:
IXFH28N60P3-VB is very suitable for use in high-voltage switching power supplies, providing stable switching performance at high voltage, reducing energy loss, and improving overall energy efficiency.
2. **Photovoltaic inverter**:
This MOSFET can be used in photovoltaic inverters to efficiently convert the DC power of solar cells into AC power, support the use of renewable energy, and promote the development of clean energy.
3. **Motor drive system**:
IXFH28N60P3-VB performs well in motor drive applications, ensuring high efficiency and fast response of the motor under high voltage and high current conditions.
4. **Uninterruptible power supply (UPS)**:
In UPS systems, this MOSFET can be used as a high-voltage switching element to ensure fast switching when power fails to maintain the continuous power supply capability of the equipment.
5. **Industrial Automation and Control**:
IXFH28N60P3-VB can be used for high-voltage switching and current control in industrial automation systems. It is suitable for a variety of high-efficiency industrial equipment to ensure the stability and reliability of the system.
Through these application examples, IXFH28N60P3-VB demonstrates its wide applicability in systems with high voltage and high efficiency requirements, providing reliable performance support for modern power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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