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IXFH28N50Q-VB Product details
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Product Introduction
**IXFH28N50Q-VB** is a high-efficiency N-channel MOSFET in TO247 package, designed for medium-to-high voltage and high-power applications. Its maximum drain-source voltage (VDS) is 500V, which can meet the needs of power electronics in various high-voltage environments. The device has an on-resistance (RDS(ON)) of 80mΩ (@VGS = 10V), performs well under high current conditions (ID up to 40A), and can effectively reduce power losses. IXFH28N50Q-VB uses SJ_Multi-EPI technology, which provides excellent thermal management performance and electrical characteristics to ensure stability and reliability under high load conditions.
**IXFH28N50Q-VB** is a high-efficiency N-channel MOSFET in TO247 package, designed for medium-to-high voltage and high-power applications. Its maximum drain-source voltage (VDS) is 500V, which can meet the needs of power electronics in various high-voltage environments. The device has an on-resistance (RDS(ON)) of 80mΩ (@VGS = 10V), performs well under high current conditions (ID up to 40A), and can effectively reduce power losses. IXFH28N50Q-VB uses SJ_Multi-EPI technology, which provides excellent thermal management performance and electrical characteristics to ensure stability and reliability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH28N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH28N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFH28N50Q-VB is particularly suitable for switching power supply (SMPS) design. Its high voltage handling capability and low on-resistance can significantly improve the power conversion efficiency and is widely used in computer power supply and industrial power supply systems.
2. **Motor drive**: This MOSFET performs well in motor control applications and can effectively control the start and stop and speed regulation of brushless DC motors and stepper motors. It is suitable for automation equipment and robotics.
3. **Inverter**: IXFH28N50Q-VB can efficiently convert electrical energy in photovoltaic inverters and other power conversion devices, ensuring stability in high-voltage environments, and is widely used in renewable energy systems.
4. **Lighting control**: In LED drive and intelligent lighting systems, this device can achieve efficient switching control, improve energy utilization efficiency and extend the service life of equipment, suitable for modern lighting solutions.
Overall, the IXFH28N50Q-VB is an important component in high-voltage power electronics design with its excellent performance and wide application scenarios, and can meet the needs of a variety of industrial and commercial applications.
1. **Switching power supply**: IXFH28N50Q-VB is particularly suitable for switching power supply (SMPS) design. Its high voltage handling capability and low on-resistance can significantly improve the power conversion efficiency and is widely used in computer power supply and industrial power supply systems.
2. **Motor drive**: This MOSFET performs well in motor control applications and can effectively control the start and stop and speed regulation of brushless DC motors and stepper motors. It is suitable for automation equipment and robotics.
3. **Inverter**: IXFH28N50Q-VB can efficiently convert electrical energy in photovoltaic inverters and other power conversion devices, ensuring stability in high-voltage environments, and is widely used in renewable energy systems.
4. **Lighting control**: In LED drive and intelligent lighting systems, this device can achieve efficient switching control, improve energy utilization efficiency and extend the service life of equipment, suitable for modern lighting solutions.
Overall, the IXFH28N50Q-VB is an important component in high-voltage power electronics design with its excellent performance and wide application scenarios, and can meet the needs of a variety of industrial and commercial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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