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IXFH26N60-VB Product details
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1. IXFH26N60-VB Product Introduction
IXFH26N60-VB is a single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its 650V drain-source voltage (VDS) and 20A maximum drain current (ID) can meet the needs of high voltage switching and power management. This product adopts SJ_Multi-EPI technology and has a low on-resistance of 160mΩ@VGS=10V, ensuring high efficiency and low loss, and is widely used in power conversion and industrial control fields.
IXFH26N60-VB is a single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its 650V drain-source voltage (VDS) and 20A maximum drain current (ID) can meet the needs of high voltage switching and power management. This product adopts SJ_Multi-EPI technology and has a low on-resistance of 160mΩ@VGS=10V, ensuring high efficiency and low loss, and is widely used in power conversion and industrial control fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFH26N60-VB Detailed parameter description
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 160mΩ @ VGS=10V |
| Maximum drain current (ID) | 20A |
| Technology| SJ_Multi-EPI |
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 160mΩ @ VGS=10V |
| Maximum drain current (ID) | 20A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
3. Application fields and modules
1. **Power conversion system**: Applicable to high-efficiency AC-DC and DC-DC converters to reduce energy loss.
2. **Industrial motor control**: Meet high voltage and high current requirements to ensure stable operation of industrial equipment.
3. **Renewable energy system**: Applicable to solar and wind inverters to achieve efficient power conversion.
1. **Power conversion system**: Applicable to high-efficiency AC-DC and DC-DC converters to reduce energy loss.
2. **Industrial motor control**: Meet high voltage and high current requirements to ensure stable operation of industrial equipment.
3. **Renewable energy system**: Applicable to solar and wind inverters to achieve efficient power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
