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IXFH26N60Q-VB Product details
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IXFH26N60Q-VB Product Introduction
The IXFH26N60Q-VB is a high-efficiency power MOSFET in TO247 package, designed for high voltage applications. With a drain-source withstand voltage of 650V and the ability to withstand a maximum drain current of up to 20A, it is very suitable for use in harsh electrical environments. The device uses SJ_Multi-EPI technology, with low on-resistance and excellent switching characteristics, which significantly improves system efficiency and reduces energy consumption.
The IXFH26N60Q-VB is a high-efficiency power MOSFET in TO247 package, designed for high voltage applications. With a drain-source withstand voltage of 650V and the ability to withstand a maximum drain current of up to 20A, it is very suitable for use in harsh electrical environments. The device uses SJ_Multi-EPI technology, with low on-resistance and excellent switching characteristics, which significantly improves system efficiency and reduces energy consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH26N60Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH26N60Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXFH26N60Q-VB is very common in switching power supply design. As an efficient switching element, it can improve power conversion efficiency and is widely used in power adapters, chargers and industrial power systems.
2. **Motor drive**: Due to its excellent high voltage and current carrying capacity, this MOSFET can be used in motor drive applications to provide stable current output and optimize the performance and control of the motor.
3. **Inverter**: In solar inverters and other types of inverters, this device is the main switching element to achieve efficient power conversion and ensure the stability of the system under high load and high voltage conditions.
4. **Power management system**: IXFH26N60Q-VB can also be used as a switch in power management applications to help optimize the distribution and utilization efficiency of power. It is suitable for consumer electronics, communication equipment and industrial automation.
Through its excellent performance and diverse applications, IXFH26N60Q-VB becomes an important component of modern efficient power conversion and management systems.
1. **Switching power supply**: IXFH26N60Q-VB is very common in switching power supply design. As an efficient switching element, it can improve power conversion efficiency and is widely used in power adapters, chargers and industrial power systems.
2. **Motor drive**: Due to its excellent high voltage and current carrying capacity, this MOSFET can be used in motor drive applications to provide stable current output and optimize the performance and control of the motor.
3. **Inverter**: In solar inverters and other types of inverters, this device is the main switching element to achieve efficient power conversion and ensure the stability of the system under high load and high voltage conditions.
4. **Power management system**: IXFH26N60Q-VB can also be used as a switch in power management applications to help optimize the distribution and utilization efficiency of power. It is suitable for consumer electronics, communication equipment and industrial automation.
Through its excellent performance and diverse applications, IXFH26N60Q-VB becomes an important component of modern efficient power conversion and management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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