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IXFH26N60P-VB Product details
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Product Introduction
**IXFH26N60P-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, suitable for high voltage applications. The maximum leakage current of this MOSFET is 20A, the gate-source voltage can withstand ±30V, and the threshold voltage is 3.5V. Its on-resistance is 160mΩ (at VGS=10V), which makes it have good performance and reliability in the field of power management and switch control, and is suitable for various high-efficiency power supply designs.
**IXFH26N60P-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, suitable for high voltage applications. The maximum leakage current of this MOSFET is 20A, the gate-source voltage can withstand ±30V, and the threshold voltage is 3.5V. Its on-resistance is 160mΩ (at VGS=10V), which makes it have good performance and reliability in the field of power management and switch control, and is suitable for various high-efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH26N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH26N60P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: As the main switching element in the switching power supply, IXFH26N60P-VB can efficiently control the power conversion, provide stable output voltage, and reduce energy loss. It is widely used in power adapters and power modules.
2. **Power electronic equipment**: This MOSFET is very suitable for power electronic equipment such as motor drives and servo control systems. It can provide efficient current control and fast response to improve the overall performance of the system.
3. **Renewable energy system**: In solar inverters and wind power generation systems, IXFH26N60P-VB can be used for high-voltage switching to ensure efficient energy conversion and stable output, and support the effective use of renewable energy.
4. **Industrial automation**: This MOSFET has a wide range of applications in industrial automation equipment, which can efficiently control various types of motors and loads, and improve the operating efficiency and reliability of automation systems.
Through these application examples, we can see the importance of IXFH26N60P-VB in high voltage and high current environments, meeting the high performance and reliability requirements of modern electronic equipment.
1. **Switching power supply**: As the main switching element in the switching power supply, IXFH26N60P-VB can efficiently control the power conversion, provide stable output voltage, and reduce energy loss. It is widely used in power adapters and power modules.
2. **Power electronic equipment**: This MOSFET is very suitable for power electronic equipment such as motor drives and servo control systems. It can provide efficient current control and fast response to improve the overall performance of the system.
3. **Renewable energy system**: In solar inverters and wind power generation systems, IXFH26N60P-VB can be used for high-voltage switching to ensure efficient energy conversion and stable output, and support the effective use of renewable energy.
4. **Industrial automation**: This MOSFET has a wide range of applications in industrial automation equipment, which can efficiently control various types of motors and loads, and improve the operating efficiency and reliability of automation systems.
Through these application examples, we can see the importance of IXFH26N60P-VB in high voltage and high current environments, meeting the high performance and reliability requirements of modern electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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