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IXFH26N55Q-VB Product details
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Product Introduction: IXFH26N55Q-VB
IXFH26N55Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 500V and it can handle leakage currents up to 40A. The device has a threshold voltage (Vth) of 3.8V and a low on-resistance (RDS(ON)) of 80mΩ at VGS=10V, ensuring high efficiency and low power consumption. IXFH26N55Q-VB uses SJ_Multi-EPI technology, has excellent thermal management and electrical performance, and is suitable for reliable operation in a variety of harsh environments.
IXFH26N55Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 500V and it can handle leakage currents up to 40A. The device has a threshold voltage (Vth) of 3.8V and a low on-resistance (RDS(ON)) of 80mΩ at VGS=10V, ensuring high efficiency and low power consumption. IXFH26N55Q-VB uses SJ_Multi-EPI technology, has excellent thermal management and electrical performance, and is suitable for reliable operation in a variety of harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH26N55Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH26N55Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage power converters**:
The IXFH26N55Q-VB is ideal for high-voltage switching power supplies and DC-DC converters, effectively converting high-voltage power to the required voltage level. Its low on-resistance can reduce power consumption and improve the overall efficiency of the system.
2. **Industrial automation equipment**:
In industrial control systems, this MOSFET can be used for motor drives and load switches. Its high current capability and stable performance make it an ideal choice for driving a variety of industrial equipment, ensuring reliability in harsh environments.
3. **Electric vehicle charging systems**:
The IXFH26N55Q-VB is also suitable for electric vehicle charger designs, especially in fast charging systems. Its high voltage and high current characteristics can meet the high efficiency and safety requirements during the charging process.
4. **Renewable energy systems**:
This MOSFET can be used in photovoltaic inverters and wind power generation systems to help convert renewable energy into usable electricity. Its high voltage characteristics enable it to operate under high voltage output conditions, ensuring system stability and efficiency.
Through these application examples, the wide applicability of IXFH26N55Q-VB in high voltage and high power electronic devices and its excellent performance are demonstrated.
1. **High-voltage power converters**:
The IXFH26N55Q-VB is ideal for high-voltage switching power supplies and DC-DC converters, effectively converting high-voltage power to the required voltage level. Its low on-resistance can reduce power consumption and improve the overall efficiency of the system.
2. **Industrial automation equipment**:
In industrial control systems, this MOSFET can be used for motor drives and load switches. Its high current capability and stable performance make it an ideal choice for driving a variety of industrial equipment, ensuring reliability in harsh environments.
3. **Electric vehicle charging systems**:
The IXFH26N55Q-VB is also suitable for electric vehicle charger designs, especially in fast charging systems. Its high voltage and high current characteristics can meet the high efficiency and safety requirements during the charging process.
4. **Renewable energy systems**:
This MOSFET can be used in photovoltaic inverters and wind power generation systems to help convert renewable energy into usable electricity. Its high voltage characteristics enable it to operate under high voltage output conditions, ensuring system stability and efficiency.
Through these application examples, the wide applicability of IXFH26N55Q-VB in high voltage and high power electronic devices and its excellent performance are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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