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IXFH26N50-VB Product details
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Product Introduction
**IXFH26N50-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The device adopts SJ_Multi-EPI technology, has excellent conduction characteristics and switching performance, and is suitable for wide use in power electronics and industrial applications. Its maximum drain-source voltage of 500V and low on-resistance make it operate efficiently and reliably in high voltage environments.
**IXFH26N50-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The device adopts SJ_Multi-EPI technology, has excellent conduction characteristics and switching performance, and is suitable for wide use in power electronics and industrial applications. Its maximum drain-source voltage of 500V and low on-resistance make it operate efficiently and reliably in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH26N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Model**: IXFH26N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power converter**: IXFH26N50-VB is widely used in high-voltage power converters such as DC-DC converters and AC-DC power supplies. It can effectively handle high voltage and high current, ensuring high efficiency and low energy consumption.
2. **Industrial automation**: This MOSFET is suitable for motor drive and power management in industrial control systems, providing stable performance for industrial equipment and ensuring reliable operation under high load conditions.
3. **Electric vehicles**: In the battery management system (BMS) and electric drive system of electric and hybrid vehicles, IXFH26N50-VB can handle high voltage requirements, ensuring system safety and efficient performance.
4. **Welding and cutting equipment**: Due to its excellent high voltage capability, the device is suitable for use in welding equipment and cutting machines, providing reliable switching control and improving equipment performance.
5. **Consumer Electronics**: IXFH26N50-VB can be used in high-voltage power modules and smart home devices to improve energy efficiency and meet the high-performance requirements of modern home appliances.
With its excellent performance, IXFH26N50-VB has become an ideal choice for high-performance solutions in multiple industries, meeting the needs of different application scenarios.
1. **Power converter**: IXFH26N50-VB is widely used in high-voltage power converters such as DC-DC converters and AC-DC power supplies. It can effectively handle high voltage and high current, ensuring high efficiency and low energy consumption.
2. **Industrial automation**: This MOSFET is suitable for motor drive and power management in industrial control systems, providing stable performance for industrial equipment and ensuring reliable operation under high load conditions.
3. **Electric vehicles**: In the battery management system (BMS) and electric drive system of electric and hybrid vehicles, IXFH26N50-VB can handle high voltage requirements, ensuring system safety and efficient performance.
4. **Welding and cutting equipment**: Due to its excellent high voltage capability, the device is suitable for use in welding equipment and cutting machines, providing reliable switching control and improving equipment performance.
5. **Consumer Electronics**: IXFH26N50-VB can be used in high-voltage power modules and smart home devices to improve energy efficiency and meet the high-performance requirements of modern home appliances.
With its excellent performance, IXFH26N50-VB has become an ideal choice for high-performance solutions in multiple industries, meeting the needs of different application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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