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IXFH26N50Q-VB Product details
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Product Introduction
**IXFH26N50Q-VB** is a high-performance single N-channel MOSFET in a TO247 package, designed for high-voltage and high-power applications. Its maximum drain-source voltage (VDS) is 500V, enabling it to operate reliably in higher voltage environments. The device has a maximum drain current (ID) of up to 40A, providing strong current handling capabilities. Its low on-resistance (RDS(ON) is 80mΩ @ VGS=10V) can reduce power losses during switching. The threshold voltage (Vth) is 3.8V, ensuring a fast turn-on response. IXFH26N50Q-VB uses SJ_Multi-EPI technology, has good thermal stability and superior electrical performance, and is suitable for a variety of demanding applications.
**IXFH26N50Q-VB** is a high-performance single N-channel MOSFET in a TO247 package, designed for high-voltage and high-power applications. Its maximum drain-source voltage (VDS) is 500V, enabling it to operate reliably in higher voltage environments. The device has a maximum drain current (ID) of up to 40A, providing strong current handling capabilities. Its low on-resistance (RDS(ON) is 80mΩ @ VGS=10V) can reduce power losses during switching. The threshold voltage (Vth) is 3.8V, ensuring a fast turn-on response. IXFH26N50Q-VB uses SJ_Multi-EPI technology, has good thermal stability and superior electrical performance, and is suitable for a variety of demanding applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH26N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH26N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High-voltage power supply**: IXFH26N50Q-VB is very suitable for high-voltage switching power supply (SMPS), which can achieve efficient power conversion at a high voltage of 500V and is widely used in industrial power supplies and power electronic equipment.
2. **Electric vehicles**: In the drive system and battery management of electric vehicles, this MOSFET can provide efficient current control, ensure stable transmission of power, and improve overall energy efficiency.
3. **Industrial automation**: This MOSFET is suitable for various industrial equipment, such as servo drives and PLC control systems, and can handle high loads and high-frequency switching requirements to ensure reliable operation of equipment.
4. **Renewable energy**: IXFH26N50Q-VB can be used as a key switching element in solar inverters and wind power generation systems to handle high-voltage DC power and achieve efficient energy conversion and management.
5. **Lighting Control**: In high-power LED lighting applications, this MOSFET enables precise current control, improving the performance and reliability of the LED and ensuring its safe operation under high voltage conditions.
With these features and applications, the IXFH26N50Q-VB provides a reliable solution for high-voltage power management, suitable for a variety of industrial and commercial fields.
1. **High-voltage power supply**: IXFH26N50Q-VB is very suitable for high-voltage switching power supply (SMPS), which can achieve efficient power conversion at a high voltage of 500V and is widely used in industrial power supplies and power electronic equipment.
2. **Electric vehicles**: In the drive system and battery management of electric vehicles, this MOSFET can provide efficient current control, ensure stable transmission of power, and improve overall energy efficiency.
3. **Industrial automation**: This MOSFET is suitable for various industrial equipment, such as servo drives and PLC control systems, and can handle high loads and high-frequency switching requirements to ensure reliable operation of equipment.
4. **Renewable energy**: IXFH26N50Q-VB can be used as a key switching element in solar inverters and wind power generation systems to handle high-voltage DC power and achieve efficient energy conversion and management.
5. **Lighting Control**: In high-power LED lighting applications, this MOSFET enables precise current control, improving the performance and reliability of the LED and ensuring its safe operation under high voltage conditions.
With these features and applications, the IXFH26N50Q-VB provides a reliable solution for high-voltage power management, suitable for a variety of industrial and commercial fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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