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IXFH26N50P-VB Product details
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Product Introduction
IXFH26N50P-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, and it can operate stably in high voltage environments. The gate-source voltage (VGS) range of the device is ±30V, and the turn-on voltage threshold (Vth) is 3.8V, ensuring fast switching response. The on-resistance (RDS(ON)) of IXFH26N50P-VB at a gate voltage of 10V is 80mΩ, and it supports a maximum drain current (ID) of up to 40A. It uses SJ_Multi-EPI technology to optimize current conduction and thermal management performance.
IXFH26N50P-VB is a high-efficiency unipolar N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 500V, and it can operate stably in high voltage environments. The gate-source voltage (VGS) range of the device is ±30V, and the turn-on voltage threshold (Vth) is 3.8V, ensuring fast switching response. The on-resistance (RDS(ON)) of IXFH26N50P-VB at a gate voltage of 10V is 80mΩ, and it supports a maximum drain current (ID) of up to 40A. It uses SJ_Multi-EPI technology to optimize current conduction and thermal management performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH26N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.8V
- **On-resistance (RDS(ON) @ VGS=10V)**: 80mΩ
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH26N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.8V
- **On-resistance (RDS(ON) @ VGS=10V)**: 80mΩ
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
IXFH26N50P-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for high-efficiency switching power supplies and DC-DC converters, and can optimize energy conversion efficiency under high voltage conditions, especially suitable for industrial power supply and commercial power supply applications.
2. **Motor drive**: The IXFH26N50P-VB can provide stable current for motor control systems, suitable for driving needs of various industrial automation equipment and household appliances.
3. **Renewable energy applications**: Due to its high voltage and high current characteristics, this device is particularly suitable for photovoltaic inverters and wind power generation systems, which helps to improve energy conversion efficiency and system reliability.
4. **Lighting solutions**: In LED drive circuits, the IXFH26N50P-VB can effectively control current, improve the performance and stability of high-voltage lighting systems, and is suitable for a variety of lighting applications.
Through these application examples, the high voltage and high current characteristics of IXFH26N50P-VB make it an ideal choice in multiple high-performance electrical equipment.
IXFH26N50P-VB can be widely used in multiple fields and modules, including:
1. **Power conversion system**: This MOSFET is suitable for high-efficiency switching power supplies and DC-DC converters, and can optimize energy conversion efficiency under high voltage conditions, especially suitable for industrial power supply and commercial power supply applications.
2. **Motor drive**: The IXFH26N50P-VB can provide stable current for motor control systems, suitable for driving needs of various industrial automation equipment and household appliances.
3. **Renewable energy applications**: Due to its high voltage and high current characteristics, this device is particularly suitable for photovoltaic inverters and wind power generation systems, which helps to improve energy conversion efficiency and system reliability.
4. **Lighting solutions**: In LED drive circuits, the IXFH26N50P-VB can effectively control current, improve the performance and stability of high-voltage lighting systems, and is suitable for a variety of lighting applications.
Through these application examples, the high voltage and high current characteristics of IXFH26N50P-VB make it an ideal choice in multiple high-performance electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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