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IXFH23N60Q-VB Product details
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IXFH23N60Q-VB Product Introduction
IXFH23N60Q-VB is a high-efficiency power MOSFET in TO247 package, designed for high voltage applications. Its drain-source withstand voltage reaches 650V, and the maximum leakage current can reach 20A, which can meet the stringent electrical performance requirements. Based on SJ_Multi-EPI technology, this device provides low on-resistance and excellent switching performance, which can effectively improve system efficiency and reduce energy consumption.
IXFH23N60Q-VB is a high-efficiency power MOSFET in TO247 package, designed for high voltage applications. Its drain-source withstand voltage reaches 650V, and the maximum leakage current can reach 20A, which can meet the stringent electrical performance requirements. Based on SJ_Multi-EPI technology, this device provides low on-resistance and excellent switching performance, which can effectively improve system efficiency and reduce energy consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH23N60Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH23N60Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: IXFH23N60Q-VB is commonly used in switching power supply design. As an efficient switching element, it can effectively improve power conversion efficiency under high-frequency operation and is suitable for power adapters and industrial power systems.
2. **Motor drive**: With its high voltage and current capabilities, this MOSFET can be used in motor drive circuits to provide stable output and efficient motor control, suitable for various motor drive applications.
3. **Inverter**: In solar inverters and other inverter applications, this device can be used as the main switching element to achieve efficient energy conversion and ensure system stability and reliability.
4. **Power management**: In power management systems, IXFH23N60Q-VB can be used as a power switch to optimize power distribution and improve energy utilization. It is widely used in consumer electronics, communication equipment, industrial automation and other fields.
Through its excellent performance and diverse applications, IXFH23N60Q-VB has become an important choice for modern high-efficiency power conversion solutions.
1. **Switching power supply**: IXFH23N60Q-VB is commonly used in switching power supply design. As an efficient switching element, it can effectively improve power conversion efficiency under high-frequency operation and is suitable for power adapters and industrial power systems.
2. **Motor drive**: With its high voltage and current capabilities, this MOSFET can be used in motor drive circuits to provide stable output and efficient motor control, suitable for various motor drive applications.
3. **Inverter**: In solar inverters and other inverter applications, this device can be used as the main switching element to achieve efficient energy conversion and ensure system stability and reliability.
4. **Power management**: In power management systems, IXFH23N60Q-VB can be used as a power switch to optimize power distribution and improve energy utilization. It is widely used in consumer electronics, communication equipment, industrial automation and other fields.
Through its excellent performance and diverse applications, IXFH23N60Q-VB has become an important choice for modern high-efficiency power conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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