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IXFH22N50P-VB Product details
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IXFH22N50P-VB Product Introduction
The IXFH22N50P-VB is a high-performance N-channel MOSFET in a TO247 package designed for high voltage and high current applications. With a rated drain-source voltage of 500V and a maximum drain current of 40A, it is suitable for power management systems that require high performance and high reliability. The device uses SJ_Multi-EPI technology to provide a lower on-resistance (RDS(ON) = 80mΩ@VGS=10V), which excels in power conversion and drive applications.
The IXFH22N50P-VB is a high-performance N-channel MOSFET in a TO247 package designed for high voltage and high current applications. With a rated drain-source voltage of 500V and a maximum drain current of 40A, it is suitable for power management systems that require high performance and high reliability. The device uses SJ_Multi-EPI technology to provide a lower on-resistance (RDS(ON) = 80mΩ@VGS=10V), which excels in power conversion and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH22N50P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH22N50P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The IXFH22N50P-VB is suitable for high-voltage switching power supplies and is widely used in power adapters, server power supplies, and other industrial power modules. Its high withstand voltage and low conduction loss characteristics help improve power efficiency.
2. **Motor Control**: In motor drive applications, this MOSFET can be used in medium-voltage motor control systems to support the start, stop, and speed regulation of high-power motors, improving overall energy efficiency.
3. **Inverter**: This MOSFET is very suitable in solar and wind power inverters, which can efficiently convert DC power to AC power and help improve the utilization rate of renewable energy.
4. **Uninterruptible Power Supply (UPS)**: The IXFH22N50P-VB can be used for high-voltage current management in UPS systems to ensure stable power support when the power is interrupted and protect the safety of connected devices.
5. **Industrial Automation**: In various industrial equipment and automation systems, this MOSFET can be used as a power switch to control the switching operation of high-power loads, improving the responsiveness and reliability of the equipment.
The high current carrying capacity and excellent electrical performance of the IXFH22N50P-VB make it an ideal choice for high-voltage applications, meeting the various requirements of modern power electronic systems.
1. **Switching Power Supply (SMPS)**: The IXFH22N50P-VB is suitable for high-voltage switching power supplies and is widely used in power adapters, server power supplies, and other industrial power modules. Its high withstand voltage and low conduction loss characteristics help improve power efficiency.
2. **Motor Control**: In motor drive applications, this MOSFET can be used in medium-voltage motor control systems to support the start, stop, and speed regulation of high-power motors, improving overall energy efficiency.
3. **Inverter**: This MOSFET is very suitable in solar and wind power inverters, which can efficiently convert DC power to AC power and help improve the utilization rate of renewable energy.
4. **Uninterruptible Power Supply (UPS)**: The IXFH22N50P-VB can be used for high-voltage current management in UPS systems to ensure stable power support when the power is interrupted and protect the safety of connected devices.
5. **Industrial Automation**: In various industrial equipment and automation systems, this MOSFET can be used as a power switch to control the switching operation of high-power loads, improving the responsiveness and reliability of the equipment.
The high current carrying capacity and excellent electrical performance of the IXFH22N50P-VB make it an ideal choice for high-voltage applications, meeting the various requirements of modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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