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IXFH21N50-VB Product details
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IXFH21N50-VB Product Introduction
The IXFH21N50-VB is a high voltage N-channel power MOSFET in TO247 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 500V and a drain current of up to 40A, it is particularly suitable for use in high voltage power management, inverters and industrial control systems. This MOSFET uses SJ_Multi-EPI technology, providing excellent current carrying capacity and reliability, enabling stable operation under high voltage conditions.
The IXFH21N50-VB is a high voltage N-channel power MOSFET in TO247 package, designed for high voltage and medium current applications. With a maximum drain-source voltage of 500V and a drain current of up to 40A, it is particularly suitable for use in high voltage power management, inverters and industrial control systems. This MOSFET uses SJ_Multi-EPI technology, providing excellent current carrying capacity and reliability, enabling stable operation under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH21N50-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 500V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.8V
- **RDS(ON) (On-resistance)**: 80mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH21N50-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 500V
- **VGS (Gate-source voltage)**: ±30V
- **Vth (Threshold voltage)**: 3.8V
- **RDS(ON) (On-resistance)**: 80mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**:
IXFH21N50-VB is ideal for high-voltage switch-mode power supplies (SMPS), providing stable switching performance in high-voltage environments, effectively reducing power losses and improving overall energy efficiency.
2. **Inverter**:
In photovoltaic inverters, this MOSFET can be used as a high-voltage switching element to convert DC to AC, supporting the efficient use of renewable energy.
3. **Motor drive**:
IXFH21N50-VB can be used in high-voltage motor control systems, providing reliable switching performance and current management, suitable for applications such as power tools and home appliances.
4. **Uninterruptible power supply (UPS) system**:
In UPS systems, IXFH21N50-VB can be used in high-voltage conversion circuits to ensure rapid switching in the event of a power failure to maintain continuous power supply to the equipment.
5. **Industrial Automation**:
This MOSFET performs well in industrial control applications and is suitable for high-voltage switching and current control, ensuring efficient and stable operation of industrial equipment.
Through these application examples, the IXFH21N50-VB demonstrates its wide applicability in systems with high-voltage and high-efficiency requirements, providing reliable performance support for modern power electronic equipment.
1. **High-voltage power converter**:
IXFH21N50-VB is ideal for high-voltage switch-mode power supplies (SMPS), providing stable switching performance in high-voltage environments, effectively reducing power losses and improving overall energy efficiency.
2. **Inverter**:
In photovoltaic inverters, this MOSFET can be used as a high-voltage switching element to convert DC to AC, supporting the efficient use of renewable energy.
3. **Motor drive**:
IXFH21N50-VB can be used in high-voltage motor control systems, providing reliable switching performance and current management, suitable for applications such as power tools and home appliances.
4. **Uninterruptible power supply (UPS) system**:
In UPS systems, IXFH21N50-VB can be used in high-voltage conversion circuits to ensure rapid switching in the event of a power failure to maintain continuous power supply to the equipment.
5. **Industrial Automation**:
This MOSFET performs well in industrial control applications and is suitable for high-voltage switching and current control, ensuring efficient and stable operation of industrial equipment.
Through these application examples, the IXFH21N50-VB demonstrates its wide applicability in systems with high-voltage and high-efficiency requirements, providing reliable performance support for modern power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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