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IXFH21N50Q-VB Product details
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Product Introduction
**IXFH21N50Q-VB** is a high-performance N-channel MOSFET in a TO247 package designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 500V, which can meet the needs of various high-voltage power electronics applications. The device has a low on-resistance (RDS(ON)) of 80mΩ (@VGS = 10V) and performs well under high current conditions, with a maximum drain current (ID) of up to 40A. The IXFH21N50Q-VB uses SJ_Multi-EPI technology to provide excellent thermal performance and electrical characteristics to ensure reliable operation in harsh environments.
**IXFH21N50Q-VB** is a high-performance N-channel MOSFET in a TO247 package designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 500V, which can meet the needs of various high-voltage power electronics applications. The device has a low on-resistance (RDS(ON)) of 80mΩ (@VGS = 10V) and performs well under high current conditions, with a maximum drain current (ID) of up to 40A. The IXFH21N50Q-VB uses SJ_Multi-EPI technology to provide excellent thermal performance and electrical characteristics to ensure reliable operation in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH21N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH21N50Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power management**: IXFH21N50Q-VB is very suitable for switching power supply (SMPS) design, capable of handling high voltage and high current conditions, improving the conversion efficiency and stability of the system, especially in high-power power modules.
2. **Motor control**: This MOSFET performs well in motor drive applications and is suitable for the control of brushless DC motors and stepper motors. It can effectively manage the start and operation of motors and meet the needs of industrial automation.
3. **Inverter**: IXFH21N50Q-VB also has good application prospects in solar inverters and other power conversion equipment. It can efficiently convert and control electrical energy to ensure reliable operation of the system under high voltage.
4. **Lighting control**: In LED drive and intelligent lighting systems, this MOSFET can be used for efficient switch control, improve energy efficiency and extend the service life of lamps, suitable for modern intelligent lighting solutions.
In general, the IXFH21N50Q-VB is widely used in power management, motor control, lighting and other fields due to its high voltage handling capability and low power consumption characteristics. It is an important part of high-efficiency power electronics design.
1. **Power management**: IXFH21N50Q-VB is very suitable for switching power supply (SMPS) design, capable of handling high voltage and high current conditions, improving the conversion efficiency and stability of the system, especially in high-power power modules.
2. **Motor control**: This MOSFET performs well in motor drive applications and is suitable for the control of brushless DC motors and stepper motors. It can effectively manage the start and operation of motors and meet the needs of industrial automation.
3. **Inverter**: IXFH21N50Q-VB also has good application prospects in solar inverters and other power conversion equipment. It can efficiently convert and control electrical energy to ensure reliable operation of the system under high voltage.
4. **Lighting control**: In LED drive and intelligent lighting systems, this MOSFET can be used for efficient switch control, improve energy efficiency and extend the service life of lamps, suitable for modern intelligent lighting solutions.
In general, the IXFH21N50Q-VB is widely used in power management, motor control, lighting and other fields due to its high voltage handling capability and low power consumption characteristics. It is an important part of high-efficiency power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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