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IXFH20N80P-VB Product details
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IXFH20N80P-VB Product Introduction
The IXFH20N80P-VB is a high-performance power MOSFET in TO247 package, especially suitable for applications requiring high voltage and high efficiency. Its rated drain-source withstand voltage is 800V and the maximum leakage current can reach 11A, which is suitable for use in harsh working environments. The device is designed based on SJ_Multi-EPI technology, with low on-resistance and good switching performance, which helps to improve the efficiency and reliability of the system.
The IXFH20N80P-VB is a high-performance power MOSFET in TO247 package, especially suitable for applications requiring high voltage and high efficiency. Its rated drain-source withstand voltage is 800V and the maximum leakage current can reach 11A, which is suitable for use in harsh working environments. The device is designed based on SJ_Multi-EPI technology, with low on-resistance and good switching performance, which helps to improve the efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH20N80P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH20N80P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**: In high-voltage switching power supply design, IXFH20N80P-VB can be used as an efficient switching element to improve power conversion efficiency and reduce energy consumption, and is particularly suitable for industrial power supplies and power electronic equipment.
2. **Motor drive system**: Due to its high voltage and current handling capabilities, this MOSFET can be used in motor drive systems to provide stable current output and optimize motor control and drive efficiency.
3. **Inverter and frequency converter**: In solar inverters and frequency converters, this device can be used as a switching element to achieve efficient power conversion and ensure stable system operation, especially under high load and high voltage conditions.
4. **Power management system**: In various power management applications, IXFH20N80P-VB can be used as a power switch to help optimize power distribution and improve energy efficiency. It is suitable for consumer electronics, industrial automation and communication equipment.
With its excellent performance and wide applicability, the IXFH20N80P-VB is an important component of modern and efficient power conversion and management systems.
1. **High-voltage switching power supply**: In high-voltage switching power supply design, IXFH20N80P-VB can be used as an efficient switching element to improve power conversion efficiency and reduce energy consumption, and is particularly suitable for industrial power supplies and power electronic equipment.
2. **Motor drive system**: Due to its high voltage and current handling capabilities, this MOSFET can be used in motor drive systems to provide stable current output and optimize motor control and drive efficiency.
3. **Inverter and frequency converter**: In solar inverters and frequency converters, this device can be used as a switching element to achieve efficient power conversion and ensure stable system operation, especially under high load and high voltage conditions.
4. **Power management system**: In various power management applications, IXFH20N80P-VB can be used as a power switch to help optimize power distribution and improve energy efficiency. It is suitable for consumer electronics, industrial automation and communication equipment.
With its excellent performance and wide applicability, the IXFH20N80P-VB is an important component of modern and efficient power conversion and management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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