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IXFH20N60-VB Product details
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Product Introduction
**IXFH20N60-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, suitable for high voltage applications. The maximum leakage current of this MOSFET is 15A, the gate-source voltage can withstand ±30V, and the threshold voltage is 3.5V. Its on-resistance is 300mΩ (at VGS=10V), providing superior performance and reliability in various power management and switch control fields, suitable for applications requiring high efficiency and stability.
**IXFH20N60-VB** is a high-performance N-channel MOSFET in TO247 package with 650V withstand voltage, suitable for high voltage applications. The maximum leakage current of this MOSFET is 15A, the gate-source voltage can withstand ±30V, and the threshold voltage is 3.5V. Its on-resistance is 300mΩ (at VGS=10V), providing superior performance and reliability in various power management and switch control fields, suitable for applications requiring high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH20N60-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH20N60-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXFH20N60-VB can be used as the main switching element in switching power supply design to support high-efficiency conversion, optimize power output stability, and reduce energy loss.
2. **Solar inverter**: This MOSFET is suitable for use in solar inverters, capable of handling high voltage and current, ensuring efficient energy conversion from solar panels to the grid.
3. **Motor control system**: In motor drive applications, this MOSFET can effectively regulate the current during motor startup and operation, providing smooth operating performance, suitable for industrial automation equipment and home appliances.
4. **High-voltage power module**: IXFH20N60-VB can also be used in high-voltage power modules, such as battery management systems, to provide safe and stable current control to ensure long battery life and safety.
Through these application examples, we can see the wide applicability of IXFH20N60-VB in high voltage and high current environments, meeting the needs of modern electronic equipment for high performance and high reliability.
1. **Switching power supply**: IXFH20N60-VB can be used as the main switching element in switching power supply design to support high-efficiency conversion, optimize power output stability, and reduce energy loss.
2. **Solar inverter**: This MOSFET is suitable for use in solar inverters, capable of handling high voltage and current, ensuring efficient energy conversion from solar panels to the grid.
3. **Motor control system**: In motor drive applications, this MOSFET can effectively regulate the current during motor startup and operation, providing smooth operating performance, suitable for industrial automation equipment and home appliances.
4. **High-voltage power module**: IXFH20N60-VB can also be used in high-voltage power modules, such as battery management systems, to provide safe and stable current control to ensure long battery life and safety.
Through these application examples, we can see the wide applicability of IXFH20N60-VB in high voltage and high current environments, meeting the needs of modern electronic equipment for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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