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IXFH20N60Q-VB Product details
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Product Introduction: IXFH20N60Q-VB
The IXFH20N60Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. With a maximum drain-source voltage (VDS) of 650V, it can handle a leakage current of up to 15A, making it suitable for use in high-voltage and high-power environments. The device has a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 300mΩ, ensuring high performance and reliability in a variety of applications. Using SJ_Multi-EPI technology, the IXFH20N60Q-VB has excellent thermal and electrical properties, and can meet the high requirements of modern electronic devices for power density and efficiency.
The IXFH20N60Q-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. With a maximum drain-source voltage (VDS) of 650V, it can handle a leakage current of up to 15A, making it suitable for use in high-voltage and high-power environments. The device has a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 300mΩ, ensuring high performance and reliability in a variety of applications. Using SJ_Multi-EPI technology, the IXFH20N60Q-VB has excellent thermal and electrical properties, and can meet the high requirements of modern electronic devices for power density and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH20N60Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH20N60Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **Power converter**:
The IXFH20N60Q-VB is suitable for use in switch mode power supplies (SMPS) and DC-DC converters, especially in applications requiring high voltage. Its low on-resistance helps improve system efficiency, reduce heat generation, and extend the life of the equipment.
2. **Motor drive**:
In motor control systems, this MOSFET can be used to drive DC motors and stepper motors. Its high current handling capability and excellent switching characteristics enable it to operate stably under high load conditions, suitable for automation control of industrial and household appliances.
3. **Solar inverter**:
The IXFH20N60Q-VB can also be used in photovoltaic inverters to convert DC power generated by solar power generation systems into AC power. Its high voltage and high power characteristics ensure the stability and efficiency of the system under different operating conditions.
4. **High-voltage power module**:
This MOSFET can be used in the design of high-voltage power modules, which are widely used in communication equipment and industrial power supply systems. Its excellent thermal performance and high-voltage capability ensure reliable operation in high-voltage environments.
Through these examples, the diverse applications of the IXFH20N60Q-VB demonstrate its importance and advantages in the high-voltage, high-power field.
1. **Power converter**:
The IXFH20N60Q-VB is suitable for use in switch mode power supplies (SMPS) and DC-DC converters, especially in applications requiring high voltage. Its low on-resistance helps improve system efficiency, reduce heat generation, and extend the life of the equipment.
2. **Motor drive**:
In motor control systems, this MOSFET can be used to drive DC motors and stepper motors. Its high current handling capability and excellent switching characteristics enable it to operate stably under high load conditions, suitable for automation control of industrial and household appliances.
3. **Solar inverter**:
The IXFH20N60Q-VB can also be used in photovoltaic inverters to convert DC power generated by solar power generation systems into AC power. Its high voltage and high power characteristics ensure the stability and efficiency of the system under different operating conditions.
4. **High-voltage power module**:
This MOSFET can be used in the design of high-voltage power modules, which are widely used in communication equipment and industrial power supply systems. Its excellent thermal performance and high-voltage capability ensure reliable operation in high-voltage environments.
Through these examples, the diverse applications of the IXFH20N60Q-VB demonstrate its importance and advantages in the high-voltage, high-power field.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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