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IXFH20N50P3-VB Product details
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Product Introduction
**IXFH20N50P3-VB** is a high voltage single N-channel MOSFET in a TO247 package designed for high voltage and medium current applications. The device uses SJ_Multi-EPI technology and has good switching characteristics and thermal performance, suitable for use in a variety of power electronics and industrial applications. Its high VDS rating makes it ideal for use in high voltage power supplies and power converters.
**IXFH20N50P3-VB** is a high voltage single N-channel MOSFET in a TO247 package designed for high voltage and medium current applications. The device uses SJ_Multi-EPI technology and has good switching characteristics and thermal performance, suitable for use in a variety of power electronics and industrial applications. Its high VDS rating makes it ideal for use in high voltage power supplies and power converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH20N50P3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Model**: IXFH20N50P3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
1. **Power Converters**: The IXFH20N50P3-VB is widely used in various power converters such as DC-DC converters and AC-DC power supplies. Its high VDS rating and low on-resistance characteristics enable it to operate efficiently under high voltage and high current conditions.
2. **Industrial Automation**: This MOSFET is suitable for power management and motor drive in industrial automation equipment, providing stable performance to ensure efficient operation and reliability of the equipment.
3. **Electric Vehicles**: In electric and hybrid vehicles, the IXFH20N50P3-VB can be used in battery management systems (BMS) and electric drive systems to ensure high efficiency and safety in high voltage environments.
4. **Welding Equipment**: Due to its high voltage and current handling capabilities, the device is also suitable for welding equipment to provide reliable switching control.
5. **Consumer Electronics**: IXFH20N50P3-VB can be used in high-voltage power supplies and smart home devices to improve energy efficiency and meet the high performance and efficiency requirements of modern electronic products.
The excellent performance of this MOSFET makes it a high-efficiency solution in a variety of industries, able to meet the needs of different application scenarios.
1. **Power Converters**: The IXFH20N50P3-VB is widely used in various power converters such as DC-DC converters and AC-DC power supplies. Its high VDS rating and low on-resistance characteristics enable it to operate efficiently under high voltage and high current conditions.
2. **Industrial Automation**: This MOSFET is suitable for power management and motor drive in industrial automation equipment, providing stable performance to ensure efficient operation and reliability of the equipment.
3. **Electric Vehicles**: In electric and hybrid vehicles, the IXFH20N50P3-VB can be used in battery management systems (BMS) and electric drive systems to ensure high efficiency and safety in high voltage environments.
4. **Welding Equipment**: Due to its high voltage and current handling capabilities, the device is also suitable for welding equipment to provide reliable switching control.
5. **Consumer Electronics**: IXFH20N50P3-VB can be used in high-voltage power supplies and smart home devices to improve energy efficiency and meet the high performance and efficiency requirements of modern electronic products.
The excellent performance of this MOSFET makes it a high-efficiency solution in a variety of industries, able to meet the needs of different application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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