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IXFH17N80Q-VB Product details
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IXFH17N80Q-VB Product Introduction
The IXFH17N80Q-VB is a high voltage N-channel MOSFET in a TO247 package, designed for high voltage and high power applications. With a rated drain-source voltage of 800V and a maximum drain current of 11A, it is suitable for applications that require handling high voltage and high current. This MOSFET uses SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 500mΩ@VGS=10V), making it an excellent choice for high voltage switching and power management applications.
The IXFH17N80Q-VB is a high voltage N-channel MOSFET in a TO247 package, designed for high voltage and high power applications. With a rated drain-source voltage of 800V and a maximum drain current of 11A, it is suitable for applications that require handling high voltage and high current. This MOSFET uses SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 500mΩ@VGS=10V), making it an excellent choice for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH17N80Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ@VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH17N80Q-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Rated drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ@VGS=10V
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converters**: The IXFH17N80Q-VB is ideal for high-voltage switch-mode power supplies (SMPS) such as industrial power supplies and data center power modules. Its high withstand voltage capability enables it to safely handle input voltage fluctuations and improve power stability.
2. **Motor drive**: In motor control applications, this MOSFET can be used to drive high-voltage motors, providing precise control and high efficiency, especially in industrial and home appliances, to improve motor operation efficiency.
3. **Inverter applications**: The IXFH17N80Q-VB is suitable for solar inverters and wind power inverters, maximizing the use of renewable energy by efficiently converting DC to AC.
4. **Uninterruptible power supply system (UPS)**: This MOSFET can be used in uninterruptible power supply systems to manage high-voltage currents, ensuring stable power supply and protecting connected devices in the event of a power failure.
5. **Industrial Automation**: In various industrial automation equipment, the IXFH17N80Q-VB can be used to drive high-power loads and perform switch control, improving the response speed and reliability of the equipment.
The high voltage and high current handling capabilities of the IXFH17N80Q-VB make it an ideal choice for various high-voltage applications, meeting the needs of modern power electronic systems.
1. **High-voltage power converters**: The IXFH17N80Q-VB is ideal for high-voltage switch-mode power supplies (SMPS) such as industrial power supplies and data center power modules. Its high withstand voltage capability enables it to safely handle input voltage fluctuations and improve power stability.
2. **Motor drive**: In motor control applications, this MOSFET can be used to drive high-voltage motors, providing precise control and high efficiency, especially in industrial and home appliances, to improve motor operation efficiency.
3. **Inverter applications**: The IXFH17N80Q-VB is suitable for solar inverters and wind power inverters, maximizing the use of renewable energy by efficiently converting DC to AC.
4. **Uninterruptible power supply system (UPS)**: This MOSFET can be used in uninterruptible power supply systems to manage high-voltage currents, ensuring stable power supply and protecting connected devices in the event of a power failure.
5. **Industrial Automation**: In various industrial automation equipment, the IXFH17N80Q-VB can be used to drive high-power loads and perform switch control, improving the response speed and reliability of the equipment.
The high voltage and high current handling capabilities of the IXFH17N80Q-VB make it an ideal choice for various high-voltage applications, meeting the needs of modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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