中文
English
IXFH170N10P-VB Product details
Back to previous pageProduct introduction：
IXFH170N10P-VB Product Introduction
The IXFH170N10P-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high current and low on-resistance applications. With a maximum drain-source voltage of 100V and a drain current of up to 320A, it is suitable for a variety of high-efficiency power management and power systems. This MOSFET uses advanced Trench technology and has extremely low on-resistance, which can reduce power loss under high current conditions and provide excellent performance.
The IXFH170N10P-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high current and low on-resistance applications. With a maximum drain-source voltage of 100V and a drain current of up to 320A, it is suitable for a variety of high-efficiency power management and power systems. This MOSFET uses advanced Trench technology and has extremely low on-resistance, which can reduce power loss under high current conditions and provide excellent performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH170N10P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 100V
- **VGS (Gate-source voltage)**: ±20V
- **Vth (Threshold voltage)**: 3V
- **RDS(ON) (On-resistance)**: 2mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 320A
- **Technology**: Trench
- **Model**: IXFH170N10P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 100V
- **VGS (Gate-source voltage)**: ±20V
- **Vth (Threshold voltage)**: 3V
- **RDS(ON) (On-resistance)**: 2mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 320A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Electric Vehicle (EV) Powertrain**:
The IXFH170N10P-VB is ideal for use in the powertrain of electric vehicles, especially in high current transmission and battery management, where it can efficiently handle power and improve overall energy efficiency.
2. **High Efficiency Power Converters**:
This MOSFET can be used in switch mode power supplies (SMPS) and DC-DC converters to provide stable output at high currents and achieve efficient power conversion with low power consumption.
3. **Motor Drive**:
In industrial and consumer motor drive applications, the IXFH170N10P-VB can achieve fast switching and efficient control to ensure reliable operation and high response speed of the motor.
4. **Uninterruptible Power Supply (UPS)**:
The IXFH170N10P-VB is suitable for high power switching in UPS systems, where it can quickly switch when the power is interrupted to ensure continuous power supply to the equipment.
5. **LED drive circuit**:
In high-power LED lighting systems, this MOSFET can be used as an efficient drive switch to provide uniform current control, achieve energy saving and extend LED life.
Through these application examples, IXFH170N10P-VB demonstrates its wide applicability in systems with high current and high efficiency requirements, making it an ideal choice for high-power electronic devices.
1. **Electric Vehicle (EV) Powertrain**:
The IXFH170N10P-VB is ideal for use in the powertrain of electric vehicles, especially in high current transmission and battery management, where it can efficiently handle power and improve overall energy efficiency.
2. **High Efficiency Power Converters**:
This MOSFET can be used in switch mode power supplies (SMPS) and DC-DC converters to provide stable output at high currents and achieve efficient power conversion with low power consumption.
3. **Motor Drive**:
In industrial and consumer motor drive applications, the IXFH170N10P-VB can achieve fast switching and efficient control to ensure reliable operation and high response speed of the motor.
4. **Uninterruptible Power Supply (UPS)**:
The IXFH170N10P-VB is suitable for high power switching in UPS systems, where it can quickly switch when the power is interrupted to ensure continuous power supply to the equipment.
5. **LED drive circuit**:
In high-power LED lighting systems, this MOSFET can be used as an efficient drive switch to provide uniform current control, achieve energy saving and extend LED life.
Through these application examples, IXFH170N10P-VB demonstrates its wide applicability in systems with high current and high efficiency requirements, making it an ideal choice for high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
