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IXFH16N90Q-VB Product details
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Product Introduction
**IXFH16N90Q-VB** is a high-voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) reaches 900V, enabling it to cope with various applications in high voltage environments. This MOSFET has a relatively low on-resistance (RDS(ON)) of 205mΩ (@VGS = 10V), which can maintain high efficiency under high current conditions. IXFH16N90Q-VB adopts SJ_Multi-EPI technology, providing excellent thermal management capabilities and electrical performance, ensuring reliability and stability in harsh environments.
**IXFH16N90Q-VB** is a high-voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) reaches 900V, enabling it to cope with various applications in high voltage environments. This MOSFET has a relatively low on-resistance (RDS(ON)) of 205mΩ (@VGS = 10V), which can maintain high efficiency under high current conditions. IXFH16N90Q-VB adopts SJ_Multi-EPI technology, providing excellent thermal management capabilities and electrical performance, ensuring reliability and stability in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH16N90Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 205mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH16N90Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 205mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFH16N90Q-VB is particularly suitable for switching power supply (SMPS) due to its high withstand voltage and low on-resistance. It can effectively improve the efficiency and stability of the system during power conversion, especially under high load conditions.
2. **Motor drive**: This MOSFET performs well in industrial motor drives and is suitable for controlling the start, stop and speed regulation of high-power motors (such as brushless DC motors and stepper motors) to meet the needs of stringent industrial applications.
3. **Inverter**: In solar inverters and other power conversion systems, IXFH16N90Q-VB can handle high voltage and high power, ensure efficient power conversion, and is suitable for various renewable energy solutions.
4. **Lighting control**: In LED drive and intelligent lighting systems, this MOSFET can provide efficient switching control, improve energy utilization efficiency and extend equipment life, suitable for modern lighting applications.
In summary, IXFH16N90Q-VB has become an indispensable key component in high-voltage power electronic design due to its excellent performance and wide applicability.
1. **Switching power supply**: IXFH16N90Q-VB is particularly suitable for switching power supply (SMPS) due to its high withstand voltage and low on-resistance. It can effectively improve the efficiency and stability of the system during power conversion, especially under high load conditions.
2. **Motor drive**: This MOSFET performs well in industrial motor drives and is suitable for controlling the start, stop and speed regulation of high-power motors (such as brushless DC motors and stepper motors) to meet the needs of stringent industrial applications.
3. **Inverter**: In solar inverters and other power conversion systems, IXFH16N90Q-VB can handle high voltage and high power, ensure efficient power conversion, and is suitable for various renewable energy solutions.
4. **Lighting control**: In LED drive and intelligent lighting systems, this MOSFET can provide efficient switching control, improve energy utilization efficiency and extend equipment life, suitable for modern lighting applications.
In summary, IXFH16N90Q-VB has become an indispensable key component in high-voltage power electronic design due to its excellent performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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