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IXFH16N80P-VB Product details
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1. IXFH16N80P-VB Product Introduction
The IXFH16N80P-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for high voltage and high power applications. The device has a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 11A, making it an excellent performer in the field of power electronics. Its advanced SJ_Multi-EPI (super junction multi-epitaxial) technology effectively reduces the on-resistance to 500mΩ@VGS=10V, improving the energy efficiency and heat dissipation performance of the system. This MOSFET can operate stably under high voltage and high current conditions, making it ideal for a variety of power conversion and control applications.
The IXFH16N80P-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for high voltage and high power applications. The device has a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 11A, making it an excellent performer in the field of power electronics. Its advanced SJ_Multi-EPI (super junction multi-epitaxial) technology effectively reduces the on-resistance to 500mΩ@VGS=10V, improving the energy efficiency and heat dissipation performance of the system. This MOSFET can operate stably under high voltage and high current conditions, making it ideal for a variety of power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFH16N80P-VB Detailed parameter description
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 500mΩ @ VGS=10V |
| Maximum drain current (ID) | 11A |
| Technology| SJ_Multi-EPI (Super Junction Multi-Epi) |
| Parameter| Value|
|-------------------|----------------------|
| Package| TO247 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 500mΩ @ VGS=10V |
| Maximum drain current (ID) | 11A |
| Technology| SJ_Multi-EPI (Super Junction Multi-Epi) |
Domain and module applications：
3. Application fields and modules
1. **High-voltage power converter**
IXFH16N80P-VB has a wide range of applications in high-voltage switching power supplies (SMPS), especially in AC-DC converters that need to handle high voltage and high power. Its 800V withstand voltage capability and low on-resistance ensure an efficient power conversion process, reduce energy loss, and are suitable for power adapters and power distribution systems.
2. **Industrial automation equipment**
This MOSFET also performs well in industrial automation equipment, especially in motor drive and control systems. Its high withstand voltage and high current capability are suitable for switching applications that drive motors, ensuring high efficiency and reliability of the system, especially in high load and frequent switching situations.
3. **Electric vehicle chargers and inverters**
IXFH16N80P-VB is suitable for electric vehicle chargers and inverter systems, where its high voltage characteristics and stable performance can handle complex power conversion and management tasks and improve the charging efficiency of electric vehicles.
4. **Power Electronics and Renewable Energy Systems**
In solar inverters and wind energy conversion systems, this MOSFET can effectively convert DC to AC to meet the requirements of the grid. Its high voltage withstand capability and excellent conductivity make it an ideal choice for renewable energy applications.
Overall, the IXFH16N80P-VB combines the advantages of high voltage, high current and low on-resistance, making it an ideal solution for high-performance, high-reliability applications.
1. **High-voltage power converter**
IXFH16N80P-VB has a wide range of applications in high-voltage switching power supplies (SMPS), especially in AC-DC converters that need to handle high voltage and high power. Its 800V withstand voltage capability and low on-resistance ensure an efficient power conversion process, reduce energy loss, and are suitable for power adapters and power distribution systems.
2. **Industrial automation equipment**
This MOSFET also performs well in industrial automation equipment, especially in motor drive and control systems. Its high withstand voltage and high current capability are suitable for switching applications that drive motors, ensuring high efficiency and reliability of the system, especially in high load and frequent switching situations.
3. **Electric vehicle chargers and inverters**
IXFH16N80P-VB is suitable for electric vehicle chargers and inverter systems, where its high voltage characteristics and stable performance can handle complex power conversion and management tasks and improve the charging efficiency of electric vehicles.
4. **Power Electronics and Renewable Energy Systems**
In solar inverters and wind energy conversion systems, this MOSFET can effectively convert DC to AC to meet the requirements of the grid. Its high voltage withstand capability and excellent conductivity make it an ideal choice for renewable energy applications.
Overall, the IXFH16N80P-VB combines the advantages of high voltage, high current and low on-resistance, making it an ideal solution for high-performance, high-reliability applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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