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IXFH16N60P3-VB Product details
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IXFH16N60P3-VB Product Introduction
The IXFH16N60P3-VB is a high voltage power MOSFET in TO247 package, suitable for a variety of high power and high efficiency applications. With a withstand voltage of 650V and a maximum continuous leakage current of 20A, this device is very suitable for working in high voltage environments. Its design adopts SJ_Multi-EPI technology, with excellent on-resistance and switching performance, which can effectively reduce power consumption and improve the overall efficiency of the system.
The IXFH16N60P3-VB is a high voltage power MOSFET in TO247 package, suitable for a variety of high power and high efficiency applications. With a withstand voltage of 650V and a maximum continuous leakage current of 20A, this device is very suitable for working in high voltage environments. Its design adopts SJ_Multi-EPI technology, with excellent on-resistance and switching performance, which can effectively reduce power consumption and improve the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH16N60P3-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH16N60P3-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching power supply**: IXFH16N60P3-VB is often used as a switching element in switching power supplies, which can effectively improve conversion efficiency, reduce heat generation, and is suitable for high-frequency operation.
2. **Motor drive**: Due to its high voltage and high current handling capabilities, this MOSFET can be used in motor drive circuits to achieve higher power density and smaller size.
3. **Inverter**: In solar inverters and other types of inverters, IXFH16N60P3-VB can be used as the main switching element to improve conversion efficiency and stability.
4. **Power management**: In power management systems, this device can be used as an efficient power switch to optimize the use and distribution of power, suitable for a variety of consumer electronics and industrial equipment.
Through its superior performance and adaptability, IXFH16N60P3-VB can meet the needs of modern efficient power conversion and management.
1. **Switching power supply**: IXFH16N60P3-VB is often used as a switching element in switching power supplies, which can effectively improve conversion efficiency, reduce heat generation, and is suitable for high-frequency operation.
2. **Motor drive**: Due to its high voltage and high current handling capabilities, this MOSFET can be used in motor drive circuits to achieve higher power density and smaller size.
3. **Inverter**: In solar inverters and other types of inverters, IXFH16N60P3-VB can be used as the main switching element to improve conversion efficiency and stability.
4. **Power management**: In power management systems, this device can be used as an efficient power switch to optimize the use and distribution of power, suitable for a variety of consumer electronics and industrial equipment.
Through its superior performance and adaptability, IXFH16N60P3-VB can meet the needs of modern efficient power conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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