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IXFH16N50P-VB Product details
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Product Introduction
**IXFH16N50P-VB** is a high-performance N-channel MOSFET in TO247 package with 500V withstand voltage and 40A continuous leakage current. Its gate-source voltage can withstand ±30V and the threshold voltage is 3.8V. The on-resistance of this MOSFET is 80mΩ (at VGS=10V), which is suitable for high voltage and high current applications and is widely used in power management and switching power supplies.
**IXFH16N50P-VB** is a high-performance N-channel MOSFET in TO247 package with 500V withstand voltage and 40A continuous leakage current. Its gate-source voltage can withstand ±30V and the threshold voltage is 3.8V. The on-resistance of this MOSFET is 80mΩ (at VGS=10V), which is suitable for high voltage and high current applications and is widely used in power management and switching power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH16N50P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH16N50P-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: IXFH16N50P-VB can be used as the main switching element in the switching power supply, supporting high-efficiency conversion and low-power design, ensuring the stability and reliability of the power system.
2. **Electric vehicle charger**: This MOSFET is suitable for use in the charger of electric vehicles, which can handle high voltage and high current and optimize charging efficiency.
3. **Motor drive**: In motor drive applications, this MOSFET can effectively control the start and stop of the motor, provide smooth current regulation, and is suitable for industrial automation equipment.
4. **High-frequency inverter**: IXFH16N50P-VB is also suitable for high-frequency inverters, supporting energy conversion in solar inverters and wind power generation systems.
Through the above application examples, it can be seen that this MOSFET plays an important role in multiple high-performance fields and can meet the requirements of modern electrical equipment for high efficiency and high reliability.
1. **Switching power supply**: IXFH16N50P-VB can be used as the main switching element in the switching power supply, supporting high-efficiency conversion and low-power design, ensuring the stability and reliability of the power system.
2. **Electric vehicle charger**: This MOSFET is suitable for use in the charger of electric vehicles, which can handle high voltage and high current and optimize charging efficiency.
3. **Motor drive**: In motor drive applications, this MOSFET can effectively control the start and stop of the motor, provide smooth current regulation, and is suitable for industrial automation equipment.
4. **High-frequency inverter**: IXFH16N50P-VB is also suitable for high-frequency inverters, supporting energy conversion in solar inverters and wind power generation systems.
Through the above application examples, it can be seen that this MOSFET plays an important role in multiple high-performance fields and can meet the requirements of modern electrical equipment for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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