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IXFH16N50P3-VB Product details
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Product Introduction: IXFH16N50P3-VB
The IXFH16N50P3-VB is a high voltage single tube N-channel MOSFET in a TO247 package, suitable for power management applications that require high voltage and high current. The device is rated at 500V and can operate stably under extreme conditions. It has good thermal management characteristics and low on-resistance to ensure efficient power conversion. Its SJ_Multi-EPI technology further improves the performance of the device, making it excel in high frequency and high power applications.
The IXFH16N50P3-VB is a high voltage single tube N-channel MOSFET in a TO247 package, suitable for power management applications that require high voltage and high current. The device is rated at 500V and can operate stably under extreme conditions. It has good thermal management characteristics and low on-resistance to ensure efficient power conversion. Its SJ_Multi-EPI technology further improves the performance of the device, making it excel in high frequency and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH16N50P3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH16N50P3-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **Power supply modules**:
The IXFH16N50P3-VB is well suited for high-voltage power supply devices such as switching power supplies and DC-DC converters. In these applications, the device's high voltage capability and low on-resistance ensure efficient energy transfer, reducing power consumption and heat generation.
2. **Industrial control systems**:
In industrial automation and control systems, the IXFH16N50P3-VB can be used as a switching element to drive high-power loads such as motor drives and servo drives. Its high current handling capability enables it to meet stringent requirements for dynamic response and stability.
3. **Electric vehicle charging equipment**:
This MOSFET is also suitable for the design of electric vehicle chargers, especially in fast charging systems. Its high voltage performance enables it to operate safely under high current conditions, ensuring charging efficiency and equipment safety.
4. **Inverter**:
In the field of renewable energy, IXFH16N50P3-VB can be used in the design of photovoltaic inverters and wind power inverters. Its high voltage characteristics and low loss characteristics enable it to effectively convert DC power into AC power to power the grid or load.
Through these application examples, we can see the wide applicability and reliability of IXFH16N50P3-VB in high-voltage, high-power electronic equipment.
1. **Power supply modules**:
The IXFH16N50P3-VB is well suited for high-voltage power supply devices such as switching power supplies and DC-DC converters. In these applications, the device's high voltage capability and low on-resistance ensure efficient energy transfer, reducing power consumption and heat generation.
2. **Industrial control systems**:
In industrial automation and control systems, the IXFH16N50P3-VB can be used as a switching element to drive high-power loads such as motor drives and servo drives. Its high current handling capability enables it to meet stringent requirements for dynamic response and stability.
3. **Electric vehicle charging equipment**:
This MOSFET is also suitable for the design of electric vehicle chargers, especially in fast charging systems. Its high voltage performance enables it to operate safely under high current conditions, ensuring charging efficiency and equipment safety.
4. **Inverter**:
In the field of renewable energy, IXFH16N50P3-VB can be used in the design of photovoltaic inverters and wind power inverters. Its high voltage characteristics and low loss characteristics enable it to effectively convert DC power into AC power to power the grid or load.
Through these application examples, we can see the wide applicability and reliability of IXFH16N50P3-VB in high-voltage, high-power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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