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IXFH150N20T-VB Product details
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Product Introduction
**IXFH150N20T-VB** is a high current N-channel MOSFET in a TO247 package designed for medium and high voltage applications. With a maximum drain-source voltage (VDS) of 200V and a maximum drain current (ID) of up to 96A, it is able to perform well in high current applications. The device has a low on-resistance (RDS(ON)) of 21mΩ (@VGS = 10V), which helps reduce power consumption and improve system efficiency. Based on Trench technology, the IXFH150N20T-VB provides excellent current handling capability and thermal performance for applications requiring efficient power transmission.
**IXFH150N20T-VB** is a high current N-channel MOSFET in a TO247 package designed for medium and high voltage applications. With a maximum drain-source voltage (VDS) of 200V and a maximum drain current (ID) of up to 96A, it is able to perform well in high current applications. The device has a low on-resistance (RDS(ON)) of 21mΩ (@VGS = 10V), which helps reduce power consumption and improve system efficiency. Based on Trench technology, the IXFH150N20T-VB provides excellent current handling capability and thermal performance for applications requiring efficient power transmission.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH150N20T-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**:
- 21mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
- **Model**: IXFH150N20T-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**:
- 21mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 96A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Motor drive**: The IXFH150N20T-VB is ideal for high-power motor drive systems such as industrial motors, brushless DC motors (BLDC), and electric vehicle drive control modules. In these applications, the MOSFET can effectively control the start and stop and speed of the motor and provide stable performance under high load conditions.
2. **Power management**: In DC-DC converters and power management modules, the IXFH150N20T-VB can improve power conversion efficiency and reduce heat generation through its low on-resistance and high current handling capability, and is particularly suitable for high-power switching power supplies and power transmission equipment.
3. **Inverter and power conversion system**: This MOSFET also performs well in photovoltaic systems, wind energy systems, and uninterruptible power supplies (UPS). It can withstand high currents with low losses, enabling efficient power transmission and conversion in energy conversion modules.
4. **Industrial Automation Equipment**: In automation control systems and high-power electronic control equipment, the IXFH150N20T-VB can be used to achieve efficient switching control of various high-power devices with its excellent performance and durability.
In summary, the IXFH150N20T-VB MOSFET is an ideal choice for various industrial, power management and motor control applications due to its high current, high efficiency and low on-resistance.
1. **Motor drive**: The IXFH150N20T-VB is ideal for high-power motor drive systems such as industrial motors, brushless DC motors (BLDC), and electric vehicle drive control modules. In these applications, the MOSFET can effectively control the start and stop and speed of the motor and provide stable performance under high load conditions.
2. **Power management**: In DC-DC converters and power management modules, the IXFH150N20T-VB can improve power conversion efficiency and reduce heat generation through its low on-resistance and high current handling capability, and is particularly suitable for high-power switching power supplies and power transmission equipment.
3. **Inverter and power conversion system**: This MOSFET also performs well in photovoltaic systems, wind energy systems, and uninterruptible power supplies (UPS). It can withstand high currents with low losses, enabling efficient power transmission and conversion in energy conversion modules.
4. **Industrial Automation Equipment**: In automation control systems and high-power electronic control equipment, the IXFH150N20T-VB can be used to achieve efficient switching control of various high-power devices with its excellent performance and durability.
In summary, the IXFH150N20T-VB MOSFET is an ideal choice for various industrial, power management and motor control applications due to its high current, high efficiency and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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