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IXFH14N80-VB Product details
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Product Introduction
**IXFH14N80-VB** is a high voltage N-channel MOSFET in TO247 package, designed for high voltage power applications. Its maximum drain-source voltage (VDS) can reach 800V, suitable for power equipment that needs to handle high voltage and high power. The device has a low on-resistance (RDS(ON)) and can maintain efficient operation even under high current conditions. IXFH14N80-VB adopts advanced SJ_Multi-EPI technology, which provides excellent thermal management and electrical performance, ensuring reliable performance and long-term stability.
**IXFH14N80-VB** is a high voltage N-channel MOSFET in TO247 package, designed for high voltage power applications. Its maximum drain-source voltage (VDS) can reach 800V, suitable for power equipment that needs to handle high voltage and high power. The device has a low on-resistance (RDS(ON)) and can maintain efficient operation even under high current conditions. IXFH14N80-VB adopts advanced SJ_Multi-EPI technology, which provides excellent thermal management and electrical performance, ensuring reliable performance and long-term stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH14N80-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH14N80-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High-voltage switching power supply**: With its high voltage of 800V and low on-resistance performance, the IXFH14N80-VB is very suitable for use as a power switching element in a switching power supply (SMPS). These applications require high voltage tolerance and high efficiency, and are particularly suitable for high-power modules in industrial power supplies and communication equipment.
2. **Inverter**: This MOSFET is particularly suitable for energy conversion systems such as solar inverters and UPS (uninterruptible power supply). These applications need to handle high-voltage currents, and the IXFH14N80-VB ensures efficient power conversion and high reliability.
3. **Motor control**: In industrial motor drives, the device can be used for the control of high-voltage brushless DC motors (BLDC) and stepper motors, supporting efficient motor speed regulation and control.
4. **High-voltage lighting system**: In high-voltage LED drive circuits and lighting control systems, the IXFH14N80-VB provides reliable switching control capabilities, helping to improve energy efficiency and extend the life of the equipment.
In high-voltage power applications, this MOSFET can significantly improve the power density and efficiency of the system with its low on-resistance and excellent electrical performance, making it an ideal choice for high-performance power systems and high-voltage motor drive designs.
1. **High-voltage switching power supply**: With its high voltage of 800V and low on-resistance performance, the IXFH14N80-VB is very suitable for use as a power switching element in a switching power supply (SMPS). These applications require high voltage tolerance and high efficiency, and are particularly suitable for high-power modules in industrial power supplies and communication equipment.
2. **Inverter**: This MOSFET is particularly suitable for energy conversion systems such as solar inverters and UPS (uninterruptible power supply). These applications need to handle high-voltage currents, and the IXFH14N80-VB ensures efficient power conversion and high reliability.
3. **Motor control**: In industrial motor drives, the device can be used for the control of high-voltage brushless DC motors (BLDC) and stepper motors, supporting efficient motor speed regulation and control.
4. **High-voltage lighting system**: In high-voltage LED drive circuits and lighting control systems, the IXFH14N80-VB provides reliable switching control capabilities, helping to improve energy efficiency and extend the life of the equipment.
In high-voltage power applications, this MOSFET can significantly improve the power density and efficiency of the system with its low on-resistance and excellent electrical performance, making it an ideal choice for high-performance power systems and high-voltage motor drive designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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