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IXFH14N60P3-VB Product details
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Product Introduction
IXFH14N60P3-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 650V and can operate stably in harsh voltage environments. Its gate-source voltage (VGS) range is ±30V, and the turn-on voltage threshold (Vth) is 3.5V, ensuring fast switching response. The on-resistance (RDS(ON)) of IXFH14N60P3-VB is 430mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of 18A. It uses planar technology (Plannar) to optimize the performance and reliability of the device.
IXFH14N60P3-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 650V and can operate stably in harsh voltage environments. Its gate-source voltage (VGS) range is ±30V, and the turn-on voltage threshold (Vth) is 3.5V, ensuring fast switching response. The on-resistance (RDS(ON)) of IXFH14N60P3-VB is 430mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of 18A. It uses planar technology (Plannar) to optimize the performance and reliability of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 18A | 430mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH14N60P3-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=10V)**: 430mΩ
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology (Plannar)
- **Model**: IXFH14N60P3-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=10V)**: 430mΩ
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology (Plannar)
Domain and module applications：
Applicable fields and modules
IXFH14N60P3-VB can be widely used in multiple fields and modules, including:
1. **Power conversion**: This MOSFET is suitable for high-efficiency switching power supplies and DC-DC converters, and can optimize energy conversion efficiency and reduce power consumption at high voltage.
2. **Motor drive**: In motor drive and control systems, IXFH14N60P3-VB can provide stable current control, suitable for the driving needs of various industrial equipment and home appliances.
3. **Lighting system**: It can be used in LED lighting drive circuits, supports high voltage input, and can effectively manage current to improve the performance and stability of lighting equipment.
4. **Renewable energy**: IXFH14N60P3-VB is suitable for power conversion modules of photovoltaic inverters and wind power generation systems, meeting the requirements of high voltage and high current, and promoting the use of renewable energy.
Through these application examples, the high voltage and high current characteristics of the IXFH14N60P3-VB make it an ideal choice in a variety of high-performance electrical equipment.
IXFH14N60P3-VB can be widely used in multiple fields and modules, including:
1. **Power conversion**: This MOSFET is suitable for high-efficiency switching power supplies and DC-DC converters, and can optimize energy conversion efficiency and reduce power consumption at high voltage.
2. **Motor drive**: In motor drive and control systems, IXFH14N60P3-VB can provide stable current control, suitable for the driving needs of various industrial equipment and home appliances.
3. **Lighting system**: It can be used in LED lighting drive circuits, supports high voltage input, and can effectively manage current to improve the performance and stability of lighting equipment.
4. **Renewable energy**: IXFH14N60P3-VB is suitable for power conversion modules of photovoltaic inverters and wind power generation systems, meeting the requirements of high voltage and high current, and promoting the use of renewable energy.
Through these application examples, the high voltage and high current characteristics of the IXFH14N60P3-VB make it an ideal choice in a variety of high-performance electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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