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IXFH13N80-VB Product details
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IXFH13N80-VB Product Introduction
The IXFH13N80-VB is a high voltage N-channel MOSFET in TO247 package, designed for applications requiring high voltage resistance and stability. With a maximum drain-source voltage of 800V, it is suitable for a variety of power electronics applications, especially in high voltage environments. This MOSFET uses SJ_Multi-EPI technology, has excellent current carrying capacity and relatively low on-resistance, providing support for high-efficiency power solutions.
The IXFH13N80-VB is a high voltage N-channel MOSFET in TO247 package, designed for applications requiring high voltage resistance and stability. With a maximum drain-source voltage of 800V, it is suitable for a variety of power electronics applications, especially in high voltage environments. This MOSFET uses SJ_Multi-EPI technology, has excellent current carrying capacity and relatively low on-resistance, providing support for high-efficiency power solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH13N80-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 500mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH13N80-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 500mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**:
IXFH13N80-VB is very suitable for high-voltage switch-mode power supplies (SMPS), which can operate stably at high voltages and effectively reduce power losses to improve system efficiency.
2. **Inverter**:
In solar inverters, this MOSFET can be used as a high-voltage switch to achieve efficient conversion from DC to AC and support the use of renewable energy.
3. **Motor drive**:
IXFH13N80-VB can be used in high-voltage motor control systems such as industrial drives and electric vehicles, providing reliable switching performance to ensure stable operation of the motor.
4. **Battery management system**:
This MOSFET can be used in battery charge and discharge management to ensure safety and efficiency under high-voltage operation and support long-life battery use.
5. **Lighting and lamp control**:
In high-voltage LED lighting systems, IXFH13N80-VB can be used as a driver switch to ensure stable and efficient operation of lamps, suitable for commercial and industrial lighting applications.
Through the above application examples, it can be seen that IXFH13N80-VB has a wide range of applicability in the field of high voltage and high power requirements, providing excellent performance support for modern power electronic systems.
1. **High-voltage power converter**:
IXFH13N80-VB is very suitable for high-voltage switch-mode power supplies (SMPS), which can operate stably at high voltages and effectively reduce power losses to improve system efficiency.
2. **Inverter**:
In solar inverters, this MOSFET can be used as a high-voltage switch to achieve efficient conversion from DC to AC and support the use of renewable energy.
3. **Motor drive**:
IXFH13N80-VB can be used in high-voltage motor control systems such as industrial drives and electric vehicles, providing reliable switching performance to ensure stable operation of the motor.
4. **Battery management system**:
This MOSFET can be used in battery charge and discharge management to ensure safety and efficiency under high-voltage operation and support long-life battery use.
5. **Lighting and lamp control**:
In high-voltage LED lighting systems, IXFH13N80-VB can be used as a driver switch to ensure stable and efficient operation of lamps, suitable for commercial and industrial lighting applications.
Through the above application examples, it can be seen that IXFH13N80-VB has a wide range of applicability in the field of high voltage and high power requirements, providing excellent performance support for modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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