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IXFH13N80Q-VB Product details
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Product Introduction
**IXFH13N80Q-VB** is a high-performance N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach 800V, suitable for a variety of power electronic equipment. This MOSFET has excellent on-resistance (RDS(ON)) and performs well under high current conditions, ensuring efficient power conversion. IXFH13N80Q-VB adopts SJ_Multi-EPI technology, which provides excellent thermal management and electrical performance, suitable for operation in harsh environments.
**IXFH13N80Q-VB** is a high-performance N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach 800V, suitable for a variety of power electronic equipment. This MOSFET has excellent on-resistance (RDS(ON)) and performs well under high current conditions, ensuring efficient power conversion. IXFH13N80Q-VB adopts SJ_Multi-EPI technology, which provides excellent thermal management and electrical performance, suitable for operation in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH13N80Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH13N80Q-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ (@ VGS = 10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFH13N80Q-VB is very suitable for switching power supply design due to its high withstand voltage and low on-resistance, which can effectively improve the conversion efficiency and stability of the power supply, especially under high load conditions.
2. **Motor drive**: In motor drive applications in industrial and consumer electronics, this MOSFET can efficiently control the start and stop and speed of the motor, and is suitable for drive circuits of brushless DC motors (BLDC) and stepper motors.
3. **Inverter**: This MOSFET can handle high voltage and high power in solar inverters, wind inverters and other energy management systems to ensure efficient operation and reliability of the system.
4. **Lighting control**: In LED drive and intelligent lighting systems, IXFH13N80Q-VB can effectively control the switching and dimming of lights, improve energy efficiency and extend the service life of lamps.
Overall, IXFH13N80Q-VB is an ideal choice in modern power electronics design due to its excellent electrical performance and wide application adaptability.
1. **Switching power supply**: IXFH13N80Q-VB is very suitable for switching power supply design due to its high withstand voltage and low on-resistance, which can effectively improve the conversion efficiency and stability of the power supply, especially under high load conditions.
2. **Motor drive**: In motor drive applications in industrial and consumer electronics, this MOSFET can efficiently control the start and stop and speed of the motor, and is suitable for drive circuits of brushless DC motors (BLDC) and stepper motors.
3. **Inverter**: This MOSFET can handle high voltage and high power in solar inverters, wind inverters and other energy management systems to ensure efficient operation and reliability of the system.
4. **Lighting control**: In LED drive and intelligent lighting systems, IXFH13N80Q-VB can effectively control the switching and dimming of lights, improve energy efficiency and extend the service life of lamps.
Overall, IXFH13N80Q-VB is an ideal choice in modern power electronics design due to its excellent electrical performance and wide application adaptability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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