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IXFH12N80P-VB Product details
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IXFH12N80P-VB Product Introduction
The IXFH12N80P-VB is a high-voltage N-type MOSFET in a TO247 package, designed for high voltage and high-efficiency applications. The device has a maximum drain-source voltage (VDS) of 800V, making it suitable for circuits that require high reliability and stability. Its on-resistance (RDS(ON)) is 500mΩ at VGS=10V, giving it excellent performance in high-current applications, effectively reducing power consumption and improving system efficiency.
The IXFH12N80P-VB is a high-voltage N-type MOSFET in a TO247 package, designed for high voltage and high-efficiency applications. The device has a maximum drain-source voltage (VDS) of 800V, making it suitable for circuits that require high reliability and stability. Its on-resistance (RDS(ON)) is 500mΩ at VGS=10V, giving it excellent performance in high-current applications, effectively reducing power consumption and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH12N80P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH12N80P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFH12N80P-VB is particularly suitable for switching power supply (SMPS) design, which can achieve efficient power conversion at high voltage to ensure the stability and energy efficiency of the system.
2. **Motor drive**: This MOSFET can be used in motor control and drive circuits, supporting high voltage and high current loads, suitable for various industrial and household motor applications.
3. **LED driver**: In LED lighting systems, IXFH12N80P-VB can be used as a switching element in the drive circuit to provide stable current output to ensure high efficiency and long life of the LED.
4. **Inverter**: IXFH12N80P-VB is also suitable for power converters such as solar inverters, which can work efficiently under high voltage conditions and convert DC to AC.
5. **Power Conversion and Regulation**: This MOSFET is very useful in DC-DC converters and AC-DC converters to help achieve efficient power management and conversion.
Through these applications, the IXFH12N80P-VB demonstrates its versatility and reliability in high-voltage and high-efficiency power management, becoming an important choice for design engineers when selecting high-performance MOSFETs.
1. **Switching power supply**: IXFH12N80P-VB is particularly suitable for switching power supply (SMPS) design, which can achieve efficient power conversion at high voltage to ensure the stability and energy efficiency of the system.
2. **Motor drive**: This MOSFET can be used in motor control and drive circuits, supporting high voltage and high current loads, suitable for various industrial and household motor applications.
3. **LED driver**: In LED lighting systems, IXFH12N80P-VB can be used as a switching element in the drive circuit to provide stable current output to ensure high efficiency and long life of the LED.
4. **Inverter**: IXFH12N80P-VB is also suitable for power converters such as solar inverters, which can work efficiently under high voltage conditions and convert DC to AC.
5. **Power Conversion and Regulation**: This MOSFET is very useful in DC-DC converters and AC-DC converters to help achieve efficient power management and conversion.
Through these applications, the IXFH12N80P-VB demonstrates its versatility and reliability in high-voltage and high-efficiency power management, becoming an important choice for design engineers when selecting high-performance MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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