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IXFH120N20P-VB Product details
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Product Introduction
**IXFH120N20P-VB** is a high-performance N-channel MOSFET in a TO247 package with a drain-source voltage (VDS) of up to 200V and a drain current (ID) of up to 96A. The threshold voltage (Vth) of the device is 4V, and the on-resistance (RDS(ON)) is only 21mΩ when VGS is 10V, ensuring low energy loss and high-efficiency switching performance. The use of Trench technology makes this MOSFET perform well in high-frequency switching and high-efficiency conversion applications, making it very suitable for modern power supply design.
**IXFH120N20P-VB** is a high-performance N-channel MOSFET in a TO247 package with a drain-source voltage (VDS) of up to 200V and a drain current (ID) of up to 96A. The threshold voltage (Vth) of the device is 4V, and the on-resistance (RDS(ON)) is only 21mΩ when VGS is 10V, ensuring low energy loss and high-efficiency switching performance. The use of Trench technology makes this MOSFET perform well in high-frequency switching and high-efficiency conversion applications, making it very suitable for modern power supply design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH120N20P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 200V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 4V
- **On-Resistance(RDS(ON))**: 21mΩ @ VGS=10V
- **Drain Current(ID)**: 96A
- **Technology**: Trench
- **Model**: IXFH120N20P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 200V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 4V
- **On-Resistance(RDS(ON))**: 21mΩ @ VGS=10V
- **Drain Current(ID)**: 96A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: IXFH120N20P-VB provides superior performance in switching power supply applications and is suitable for use in DC-DC converters and other power management systems, which can improve the overall efficiency and reliability of the system.
2. **Electric vehicles**: This MOSFET can be used in battery management and electric drive systems in electric vehicles. Its high current carrying capacity makes it an important component for high-efficiency power conversion.
3. **Industrial power supply**: In industrial automation and control systems, IXFH120N20P-VB can be used in high-power power modules and inverters to ensure stable operation of equipment under high loads.
4. **High-frequency switching applications**: Due to its low on-resistance and excellent switching characteristics, this MOSFET is particularly suitable for high-frequency applications such as RF amplifiers and high-efficiency motor drive circuits, which can meet the stringent performance requirements of modern electronic devices.
Through these applications, the IXFH120N20P-VB demonstrates its wide applicability and excellent performance in a variety of high-power and high-efficiency applications.
1. **Switching power supply**: IXFH120N20P-VB provides superior performance in switching power supply applications and is suitable for use in DC-DC converters and other power management systems, which can improve the overall efficiency and reliability of the system.
2. **Electric vehicles**: This MOSFET can be used in battery management and electric drive systems in electric vehicles. Its high current carrying capacity makes it an important component for high-efficiency power conversion.
3. **Industrial power supply**: In industrial automation and control systems, IXFH120N20P-VB can be used in high-power power modules and inverters to ensure stable operation of equipment under high loads.
4. **High-frequency switching applications**: Due to its low on-resistance and excellent switching characteristics, this MOSFET is particularly suitable for high-frequency applications such as RF amplifiers and high-efficiency motor drive circuits, which can meet the stringent performance requirements of modern electronic devices.
Through these applications, the IXFH120N20P-VB demonstrates its wide applicability and excellent performance in a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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