中文
English
IXFH11N80-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IXFH11N80-VB is a high-performance unipolar N-channel MOSFET in a TO247 package designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 800V, suitable for operation in harsh voltage environments. Its gate-source voltage (VGS) range is ±30V, and the turn-on voltage threshold (Vth) is 3.5V, ensuring fast switching operation. The on-resistance (RDS(ON)) of the IXFH11N80-VB is 500mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of 11A. It uses SJ_Multi-EPI technology to optimize current conduction capability and thermal management performance.
IXFH11N80-VB is a high-performance unipolar N-channel MOSFET in a TO247 package designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 800V, suitable for operation in harsh voltage environments. Its gate-source voltage (VGS) range is ±30V, and the turn-on voltage threshold (Vth) is 3.5V, ensuring fast switching operation. The on-resistance (RDS(ON)) of the IXFH11N80-VB is 500mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of 11A. It uses SJ_Multi-EPI technology to optimize current conduction capability and thermal management performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH11N80-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=10V)**: 500mΩ
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH11N80-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Turn-on voltage threshold (Vth)**: 3.5V
- **On-resistance (RDS(ON) @ VGS=10V)**: 500mΩ
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
IXFH11N80-VB can be widely used in multiple fields and modules, including:
1. **Power converter**: This MOSFET can be used in high-voltage DC-DC converters to optimize energy conversion efficiency and reduce power consumption, especially suitable for switching power supply design.
2. **Motor drive**: In motor drive and control systems, IXFH11N80-VB can stably control current and is suitable for driving needs of various industrial automation equipment and home appliances.
3. **High-voltage lighting**: It can be used in high-voltage LED lighting applications, supporting high voltage input and providing good current management, improving the overall performance and life of lighting equipment.
4. **Renewable energy system**: IXFH11N80-VB is suitable for power conversion modules of photovoltaic inverters and wind power generation systems, supporting high voltage and high current requirements, and promoting the use of renewable energy.
Through these application examples, the high voltage and high current characteristics of IXFH11N80-VB make it an ideal choice in a variety of high-performance electrical equipment.
IXFH11N80-VB can be widely used in multiple fields and modules, including:
1. **Power converter**: This MOSFET can be used in high-voltage DC-DC converters to optimize energy conversion efficiency and reduce power consumption, especially suitable for switching power supply design.
2. **Motor drive**: In motor drive and control systems, IXFH11N80-VB can stably control current and is suitable for driving needs of various industrial automation equipment and home appliances.
3. **High-voltage lighting**: It can be used in high-voltage LED lighting applications, supporting high voltage input and providing good current management, improving the overall performance and life of lighting equipment.
4. **Renewable energy system**: IXFH11N80-VB is suitable for power conversion modules of photovoltaic inverters and wind power generation systems, supporting high voltage and high current requirements, and promoting the use of renewable energy.
Through these application examples, the high voltage and high current characteristics of IXFH11N80-VB make it an ideal choice in a variety of high-performance electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
