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IXFH110N10P-VB Product details
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IXFH110N10P-VB Product Introduction
The IXFH110N10P-VB is a high-power N-channel MOSFET in TO247 package, designed for high current and low on-resistance applications. With a maximum drain-source voltage of 100V, it is suitable for a variety of power electronics applications. Using advanced Trench technology, this MOSFET provides excellent current carrying capability and extremely low on-resistance to meet the needs of high-efficiency power management.
The IXFH110N10P-VB is a high-power N-channel MOSFET in TO247 package, designed for high current and low on-resistance applications. With a maximum drain-source voltage of 100V, it is suitable for a variety of power electronics applications. Using advanced Trench technology, this MOSFET provides excellent current carrying capability and extremely low on-resistance to meet the needs of high-efficiency power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH110N10P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 6mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 150A
- **Technology**: Trench
- **Model**: IXFH110N10P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **VDS (Maximum drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 6mΩ @ VGS = 10V
- **ID (Maximum drain current)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power converter**:
IXFH110N10P-VB is ideal for switch mode power supplies (SMPS), which can improve conversion efficiency with low on-resistance, reduce power loss, and adapt to high load requirements.
2. **Motor drive**:
In motor drive systems, this MOSFET can be used for high current motor control, supporting fast switching and high efficiency operation, suitable for applications such as power tools and home appliances.
3. **Battery charger**:
In battery management systems, IXFH110N10P-VB can be used as a charge and discharge control switch to ensure safe operation under high current conditions and improve charging efficiency.
4. **DC-DC converter**:
This MOSFET can be used in various DC-DC converters, such as boost and buck converters, to provide stable output voltage and current.
5. **LED drive circuit**:
IXFH110N10P-VB can achieve efficient current control in LED drive applications, ensure uniform brightness and improve overall energy efficiency.
Through the above application examples, it can be seen that IXFH110N10P-VB has a wide range of application potential in the field of high current and high power requirements, providing an ideal choice for improving the performance of power electronic systems.
1. **Power converter**:
IXFH110N10P-VB is ideal for switch mode power supplies (SMPS), which can improve conversion efficiency with low on-resistance, reduce power loss, and adapt to high load requirements.
2. **Motor drive**:
In motor drive systems, this MOSFET can be used for high current motor control, supporting fast switching and high efficiency operation, suitable for applications such as power tools and home appliances.
3. **Battery charger**:
In battery management systems, IXFH110N10P-VB can be used as a charge and discharge control switch to ensure safe operation under high current conditions and improve charging efficiency.
4. **DC-DC converter**:
This MOSFET can be used in various DC-DC converters, such as boost and buck converters, to provide stable output voltage and current.
5. **LED drive circuit**:
IXFH110N10P-VB can achieve efficient current control in LED drive applications, ensure uniform brightness and improve overall energy efficiency.
Through the above application examples, it can be seen that IXFH110N10P-VB has a wide range of application potential in the field of high current and high power requirements, providing an ideal choice for improving the performance of power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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