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IXFH10N90-VB Product details
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Product Introduction: IXFH10N90-VB
IXFH10N90-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 900V, which can meet the needs of various high-voltage power supplies and power electronic equipment. This MOSFET adopts SJ_Multi-EPI technology, providing excellent electrical characteristics and good thermal stability, making it reliable under high load conditions.
IXFH10N90-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 900V, which can meet the needs of various high-voltage power supplies and power electronic equipment. This MOSFET adopts SJ_Multi-EPI technology, providing excellent electrical characteristics and good thermal stability, making it reliable under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: IXFH10N90-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH10N90-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples:
1. **High-voltage power supply**: The IXFH10N90-VB is ideal for high-voltage power modules such as AC-DC converters and switching power supplies, and can operate stably at 900V, providing an efficient solution for power management.
2. **Motor control**: In motor drive applications, this MOSFET can be used to control the start and operation of the motor, especially when 9A current is required, providing reliable switching performance.
3. **Lighting system**: This MOSFET can be used in high-voltage lighting applications such as LED drivers and fluorescent lamp controls, while achieving efficient switching, helping to improve the overall performance of the system.
4. **Industrial automation**: The IXFH10N90-VB is also widely used in various industrial automation equipment, including power control systems and sensor interfaces, helping to achieve efficient power management and control strategies.
The above applications demonstrate the diverse applicability of IXFH10N90-VB under high voltage and medium current conditions, meeting the needs of different industrial and commercial fields.
1. **High-voltage power supply**: The IXFH10N90-VB is ideal for high-voltage power modules such as AC-DC converters and switching power supplies, and can operate stably at 900V, providing an efficient solution for power management.
2. **Motor control**: In motor drive applications, this MOSFET can be used to control the start and operation of the motor, especially when 9A current is required, providing reliable switching performance.
3. **Lighting system**: This MOSFET can be used in high-voltage lighting applications such as LED drivers and fluorescent lamp controls, while achieving efficient switching, helping to improve the overall performance of the system.
4. **Industrial automation**: The IXFH10N90-VB is also widely used in various industrial automation equipment, including power control systems and sensor interfaces, helping to achieve efficient power management and control strategies.
The above applications demonstrate the diverse applicability of IXFH10N90-VB under high voltage and medium current conditions, meeting the needs of different industrial and commercial fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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