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IXFH10N80P-VB Product details
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IXFH10N80P-VB Product Introduction
The IXFH10N80P-VB is a high-voltage N-type MOSFET in a TO247 package, designed for high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) can reach 800V, making it suitable for circuits requiring high voltage and high efficiency. The on-resistance (RDS(ON)) of this MOSFET is 500mΩ at VGS=10V, making it excellent in low conduction loss and high current handling.
The IXFH10N80P-VB is a high-voltage N-type MOSFET in a TO247 package, designed for high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) can reach 800V, making it suitable for circuits requiring high voltage and high efficiency. The on-resistance (RDS(ON)) of this MOSFET is 500mΩ at VGS=10V, making it excellent in low conduction loss and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXFH10N80P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: IXFH10N80P-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Switching power supply**: The IXFH10N80P-VB can be used in switching power supplies (SMPS), especially in high-voltage DC-DC converter and inverter applications, because of its high efficiency and low conduction loss, it can effectively improve the overall energy efficiency.
2. **Motor drive**: In motor control and drive circuits, this MOSFET can be used as a switching element to handle higher voltages and currents to ensure reliable starting and operation of the motor.
3. **Industrial control system**: Due to its excellent thermal performance and electrical characteristics, this MOSFET is very suitable for industrial automation and control systems, especially in applications involving high voltage and high current.
4. **LED driver**: The IXFH10N80P-VB can also be used in the driver circuit of LED lighting systems to provide stable current output and play an important role in high-efficiency lighting applications.
5. **Power Converter**: This MOSFET is suitable for various power conversion applications, such as DC to AC inverters or DC to DC boost/buck converters, helping to achieve high efficiency and high reliability.
Through these application areas, the IXFH10N80P-VB shows its versatility and superiority in high voltage and high current applications, and is an important choice for design engineers when selecting high-performance MOSFETs.
1. **Switching power supply**: The IXFH10N80P-VB can be used in switching power supplies (SMPS), especially in high-voltage DC-DC converter and inverter applications, because of its high efficiency and low conduction loss, it can effectively improve the overall energy efficiency.
2. **Motor drive**: In motor control and drive circuits, this MOSFET can be used as a switching element to handle higher voltages and currents to ensure reliable starting and operation of the motor.
3. **Industrial control system**: Due to its excellent thermal performance and electrical characteristics, this MOSFET is very suitable for industrial automation and control systems, especially in applications involving high voltage and high current.
4. **LED driver**: The IXFH10N80P-VB can also be used in the driver circuit of LED lighting systems to provide stable current output and play an important role in high-efficiency lighting applications.
5. **Power Converter**: This MOSFET is suitable for various power conversion applications, such as DC to AC inverters or DC to DC boost/buck converters, helping to achieve high efficiency and high reliability.
Through these application areas, the IXFH10N80P-VB shows its versatility and superiority in high voltage and high current applications, and is an important choice for design engineers when selecting high-performance MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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