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IXCY01N90E-VB Product details
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IXCY01N90E-VB Product Introduction
The IXCY01N90E-VB is a high voltage single N-type MOSFET in a TO252 package. Its rated drain-source voltage (VDS) is 900V, making it suitable for high voltage applications. The device has a gate-source voltage (VGS) of ±30V and a threshold voltage (Vth) of 3.5V, ensuring efficient switching operation under proper control. Its on-resistance (RDS(ON)) is 2700mΩ, and it exhibits good current carrying capability at a gate voltage of 10V, with a rated drain current (ID) of 2A. This MOSFET uses SJ_Multi-EPI technology and can operate stably in high temperature and high voltage environments.
The IXCY01N90E-VB is a high voltage single N-type MOSFET in a TO252 package. Its rated drain-source voltage (VDS) is 900V, making it suitable for high voltage applications. The device has a gate-source voltage (VGS) of ±30V and a threshold voltage (Vth) of 3.5V, ensuring efficient switching operation under proper control. Its on-resistance (RDS(ON)) is 2700mΩ, and it exhibits good current carrying capability at a gate voltage of 10V, with a rated drain current (ID) of 2A. This MOSFET uses SJ_Multi-EPI technology and can operate stably in high temperature and high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IXCY01N90E-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
- **Rated leakage current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Model**: IXCY01N90E-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
- **Rated leakage current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
1. **Power Management**: The IXCY01N90E-VB is very suitable for use in power management modules, especially in high-voltage switching power supplies and inverter designs, where it can effectively control high voltages and high currents.
2. **Electric Vehicles**: This MOSFET can be used in battery management systems for electric vehicles, where it can withstand high voltage charging and discharging processes, ensuring system stability and safety.
3. **Industrial Equipment**: In industrial control and automation equipment, this device can be used as a switching element to control motors and other high-power loads, providing reliable performance.
4. **Consumer Electronics**: Due to its high withstand voltage characteristics, the IXCY01N90E-VB is suitable for high-voltage power adapters and chargers, providing essential power solutions for consumer electronics.
5. **Solar Inverters**: In solar inverters, this MOSFET can be used to connect and disconnect photovoltaic modules, ensuring efficient energy conversion and transmission.
Through the display of these application areas, it can be seen that IXCY01N90E-VB is a very valuable MOSFET in high voltage environments and can meet the needs of a variety of industries.
1. **Power Management**: The IXCY01N90E-VB is very suitable for use in power management modules, especially in high-voltage switching power supplies and inverter designs, where it can effectively control high voltages and high currents.
2. **Electric Vehicles**: This MOSFET can be used in battery management systems for electric vehicles, where it can withstand high voltage charging and discharging processes, ensuring system stability and safety.
3. **Industrial Equipment**: In industrial control and automation equipment, this device can be used as a switching element to control motors and other high-power loads, providing reliable performance.
4. **Consumer Electronics**: Due to its high withstand voltage characteristics, the IXCY01N90E-VB is suitable for high-voltage power adapters and chargers, providing essential power solutions for consumer electronics.
5. **Solar Inverters**: In solar inverters, this MOSFET can be used to connect and disconnect photovoltaic modules, ensuring efficient energy conversion and transmission.
Through the display of these application areas, it can be seen that IXCY01N90E-VB is a very valuable MOSFET in high voltage environments and can meet the needs of a variety of industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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