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ITA08N65A-VB Product details
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Product Introduction (ITA08N65A-VB)
The ITA08N65A-VB is a high voltage N-type power MOSFET in a TO-220F package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and supports a gate-source voltage (VGS) of ±30V, making it stable in high voltage environments. Its threshold voltage (Vth) is 3.5V and its on-resistance (RDS(ON) = 1100mΩ @ VGS=10V) is relatively low, giving it good power efficiency under high current conditions. The maximum drain current (ID) of the ITA08N65A-VB is 7A, making it ideal for applications that require high reliability and voltage resistance.
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The ITA08N65A-VB is a high voltage N-type power MOSFET in a TO-220F package, designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and supports a gate-source voltage (VGS) of ±30V, making it stable in high voltage environments. Its threshold voltage (Vth) is 3.5V and its on-resistance (RDS(ON) = 1100mΩ @ VGS=10V) is relatively low, giving it good power efficiency under high current conditions. The maximum drain current (ID) of the ITA08N65A-VB is 7A, making it ideal for applications that require high reliability and voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package type**: TO-220F
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 7A
8. **Technology type**: Plannar technology
9. **Maximum power consumption (Ptot)**: Depending on the heat dissipation conditions, the power that can be sustained is usually around 50W.
10. **Operating temperature range**: -55°C to +150°C
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1. **Package type**: TO-220F
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 7A
8. **Technology type**: Plannar technology
9. **Maximum power consumption (Ptot)**: Depending on the heat dissipation conditions, the power that can be sustained is usually around 50W.
10. **Operating temperature range**: -55°C to +150°C
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Domain and module applications：
Applications and modules
1. **High-voltage power converter**: ITA08N65A-VB is very suitable for high-voltage switch-mode power supplies (SMPS) as the main switching element. Its high withstand voltage characteristics and relatively low conduction losses enable it to work stably in high-voltage environments and is widely used in power adapters, server power supplies and other fields.
2. **Industrial equipment control**: In various industrial control systems, this MOSFET can be used to drive motors and actuators to ensure reliable operation under high voltage conditions. Its stability and high withstand voltage make it an ideal choice for controlling power tools and heavy machinery.
3. **LED drive and lighting system**: In high-power LED lighting applications, ITA08N65A-VB can provide stable current to ensure efficient operation of lamps under high voltage. Especially in commercial and industrial lighting systems, its high voltage withstand capability can meet stringent application requirements.
4. **Power Electronics Devices**: Due to its high withstand voltage and stability, this MOSFET is often used in inverters and rectifiers, suitable for renewable energy systems (such as solar inverters) and battery management systems to ensure efficient energy conversion and transmission.
The excellent performance of ITA08N65A-VB makes it widely applicable in high voltage applications and can meet a variety of industrial needs.
1. **High-voltage power converter**: ITA08N65A-VB is very suitable for high-voltage switch-mode power supplies (SMPS) as the main switching element. Its high withstand voltage characteristics and relatively low conduction losses enable it to work stably in high-voltage environments and is widely used in power adapters, server power supplies and other fields.
2. **Industrial equipment control**: In various industrial control systems, this MOSFET can be used to drive motors and actuators to ensure reliable operation under high voltage conditions. Its stability and high withstand voltage make it an ideal choice for controlling power tools and heavy machinery.
3. **LED drive and lighting system**: In high-power LED lighting applications, ITA08N65A-VB can provide stable current to ensure efficient operation of lamps under high voltage. Especially in commercial and industrial lighting systems, its high voltage withstand capability can meet stringent application requirements.
4. **Power Electronics Devices**: Due to its high withstand voltage and stability, this MOSFET is often used in inverters and rectifiers, suitable for renewable energy systems (such as solar inverters) and battery management systems to ensure efficient energy conversion and transmission.
The excellent performance of ITA08N65A-VB makes it widely applicable in high voltage applications and can meet a variety of industrial needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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