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ISL9N7030BLS3ST-VB Product details
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Product Introduction – ISL9N7030BLS3ST-VB
The ISL9N7030BLS3ST-VB is a high-performance N-channel MOSFET in a TO263 package designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 2.7mΩ at VGS = 4.5V and 2.4mΩ at VGS = 10V, and the maximum continuous drain current (ID) can reach 98A. Using Trench technology, this MOSFET excels in reducing switching losses and improving efficiency, making it ideal for a variety of high-efficiency power and switching applications.
The ISL9N7030BLS3ST-VB is a high-performance N-channel MOSFET in a TO263 package designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 2.7mΩ at VGS = 4.5V and 2.4mΩ at VGS = 10V, and the maximum continuous drain current (ID) can reach 98A. Using Trench technology, this MOSFET excels in reducing switching losses and improving efficiency, making it ideal for a variety of high-efficiency power and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Operating technology**: Trench technology
- **Maximum power consumption**: 60W (based on proper heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Reverse recovery time (trr)**: 75ns (typical)
- **Package type**: TO263
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Operating technology**: Trench technology
- **Maximum power consumption**: 60W (based on proper heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Reverse recovery time (trr)**: 75ns (typical)
Domain and module applications：
Applications and module examples
1. **Power management solutions**
ISL9N7030BLS3ST-VB performs well in high-efficiency DC-DC converters and switching power supplies. Its low on-resistance and high current carrying capacity enable it to achieve lower energy consumption and higher efficiency in power management systems, and is widely used in computers, network equipment, and other consumer electronics.
2. **Motor drive and control**
This MOSFET can be used in motor drive systems and is suitable for high current and fast switching applications such as DC motor and stepper motor control. Its high efficiency ensures stable operation of motors in automation equipment and robots.
3. **LED drive circuits**
ISL9N7030BLS3ST-VB is suitable for LED drive circuits, providing stable current to ensure consistent brightness of LEDs. Its excellent thermal performance and low power consumption make it an ideal choice for lighting applications.
4. **Battery Management System (BMS)**
In battery management systems, the device can be used for charge and discharge control, capable of handling high currents, suitable for electric vehicles, energy storage systems, and portable electronic devices. Its high efficiency ensures the safety and reliability of battery systems.
Through these application areas, the ISL9N7030BLS3ST-VB demonstrates its wide applicability and importance as a high-performance N-channel MOSFET.
1. **Power management solutions**
ISL9N7030BLS3ST-VB performs well in high-efficiency DC-DC converters and switching power supplies. Its low on-resistance and high current carrying capacity enable it to achieve lower energy consumption and higher efficiency in power management systems, and is widely used in computers, network equipment, and other consumer electronics.
2. **Motor drive and control**
This MOSFET can be used in motor drive systems and is suitable for high current and fast switching applications such as DC motor and stepper motor control. Its high efficiency ensures stable operation of motors in automation equipment and robots.
3. **LED drive circuits**
ISL9N7030BLS3ST-VB is suitable for LED drive circuits, providing stable current to ensure consistent brightness of LEDs. Its excellent thermal performance and low power consumption make it an ideal choice for lighting applications.
4. **Battery Management System (BMS)**
In battery management systems, the device can be used for charge and discharge control, capable of handling high currents, suitable for electric vehicles, energy storage systems, and portable electronic devices. Its high efficiency ensures the safety and reliability of battery systems.
Through these application areas, the ISL9N7030BLS3ST-VB demonstrates its wide applicability and importance as a high-performance N-channel MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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