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ISL9N318AD3ST-VB Product details
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Product Introduction (ISL9N318AD3ST-VB)
The ISL9N318AD3ST-VB is a high-performance N-type power MOSFET in a TO-252 package, designed for low- to medium-voltage and high-current applications. The device can withstand drain-source voltages (VDS) up to 30V and has a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 1.7V, and it has a low on-resistance (RDS(ON) = 9mΩ @ VGS=4.5V and RDS(ON) = 7mΩ @ VGS=10V), which can provide excellent energy efficiency at a maximum drain current (ID) of up to 70A. This MOSFET uses advanced trench technology and is particularly suitable for applications requiring high power and high efficiency.
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The ISL9N318AD3ST-VB is a high-performance N-type power MOSFET in a TO-252 package, designed for low- to medium-voltage and high-current applications. The device can withstand drain-source voltages (VDS) up to 30V and has a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 1.7V, and it has a low on-resistance (RDS(ON) = 9mΩ @ VGS=4.5V and RDS(ON) = 7mΩ @ VGS=10V), which can provide excellent energy efficiency at a maximum drain current (ID) of up to 70A. This MOSFET uses advanced trench technology and is particularly suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package type**: TO-252
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 70A
8. **Technology type**: Trench technology
9. **Maximum power consumption (Ptot)**: Depending on the heat dissipation conditions, it is usually around 35W.
10. **Operating temperature range**: -55°C to +150°C
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1. **Package type**: TO-252
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 70A
8. **Technology type**: Trench technology
9. **Maximum power consumption (Ptot)**: Depending on the heat dissipation conditions, it is usually around 35W.
10. **Operating temperature range**: -55°C to +150°C
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Domain and module applications：
Applications and modules
1. **Power management system**: The ISL9N318AD3ST-VB is ideal for use in efficient DC-DC converters as the main switching element. Its low on-resistance and high current handling capability help improve conversion efficiency and is widely used in power adapters, server power supplies, and industrial power modules.
2. **Power tools and home appliances**: In power tools and home appliances, this MOSFET can effectively drive motors. Its high current capability ensures smooth operation of the equipment under high load conditions, improving product reliability and performance.
3. **LED lighting driver**: The ISL9N318AD3ST-VB is suitable for high-power LED drive applications. Its ultra-low on-resistance helps reduce energy loss and ensures stable output of LED light sources, and is widely used in commercial lighting and landscape lighting.
4. **Battery management and charging system**: This MOSFET can be used in battery management systems to provide effective charging and discharging control to ensure battery safety and efficiency. Especially in electric vehicles and renewable energy storage systems, the ISL9N318AD3ST-VB provides an efficient current control solution.
The excellent performance and diverse application potential of the ISL9N318AD3ST-VB enable it to perform well in various high-current, low-voltage environments, meeting the needs of different fields.
1. **Power management system**: The ISL9N318AD3ST-VB is ideal for use in efficient DC-DC converters as the main switching element. Its low on-resistance and high current handling capability help improve conversion efficiency and is widely used in power adapters, server power supplies, and industrial power modules.
2. **Power tools and home appliances**: In power tools and home appliances, this MOSFET can effectively drive motors. Its high current capability ensures smooth operation of the equipment under high load conditions, improving product reliability and performance.
3. **LED lighting driver**: The ISL9N318AD3ST-VB is suitable for high-power LED drive applications. Its ultra-low on-resistance helps reduce energy loss and ensures stable output of LED light sources, and is widely used in commercial lighting and landscape lighting.
4. **Battery management and charging system**: This MOSFET can be used in battery management systems to provide effective charging and discharging control to ensure battery safety and efficiency. Especially in electric vehicles and renewable energy storage systems, the ISL9N318AD3ST-VB provides an efficient current control solution.
The excellent performance and diverse application potential of the ISL9N318AD3ST-VB enable it to perform well in various high-current, low-voltage environments, meeting the needs of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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