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ISL9N316AD3ST-VB Product details
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ISL9N316AD3ST-VB MOSFET Product Introduction
The ISL9N316AD3ST-VB is a high-performance single N-channel MOSFET in a TO-252 package, designed for medium and high power switching applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, the device can be widely used in various power supplies and control circuits. Its on-resistance (RDS(ON)) is 6mΩ at a gate drive voltage of 4.5V and 5mΩ at 10V, supporting a drain current (ID) of up to 80A. The low threshold voltage (Vth) of 1.7V enables the MOSFET to be turned on smoothly at a lower gate drive voltage, suitable for a variety of low-voltage drive application scenarios. Using Trench technology, the ISL9N316AD3ST-VB optimizes conductivity and thermal management to ensure its superior performance in high-efficiency power supply designs.
The ISL9N316AD3ST-VB is a high-performance single N-channel MOSFET in a TO-252 package, designed for medium and high power switching applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, the device can be widely used in various power supplies and control circuits. Its on-resistance (RDS(ON)) is 6mΩ at a gate drive voltage of 4.5V and 5mΩ at 10V, supporting a drain current (ID) of up to 80A. The low threshold voltage (Vth) of 1.7V enables the MOSFET to be turned on smoothly at a lower gate drive voltage, suitable for a variety of low-voltage drive application scenarios. Using Trench technology, the ISL9N316AD3ST-VB optimizes conductivity and thermal management to ensure its superior performance in high-efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
ISL9N316AD3ST-VB MOSFET Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
Domain and module applications：
ISL9N316AD3ST-VB Applicable Fields and Application Modules
1. **Power Management System**: ISL9N316AD3ST-VB is widely used in power management modules such as DC-DC converters, chargers and power switches. Its low on-resistance and high current handling capability enable it to effectively reduce energy loss in high-efficiency power supply designs and improve overall system efficiency.
2. **Motor Drive**: In the field of industrial automation, this MOSFET is very suitable for motor control and drive systems. With its high current carrying capacity and fast switching characteristics, ISL9N316AD3ST-VB is an ideal choice for driving various motors and actuators, meeting the needs of high-power applications.
3. **Automotive Electronics**: The device is also suitable for automotive electronic devices such as battery management systems and electric power steering systems. Its voltage resistance and high conductivity enable it to provide stable performance in automotive applications, ensuring the reliability and efficiency of electrical systems.
4. **LED lighting**: ISL9N316AD3ST-VB is suitable for high-efficiency LED lighting drivers, ensuring that LED modules obtain stable current supply, improving the energy efficiency and service life of lighting systems, and is widely used in home, commercial lighting and outdoor lighting.
ISL9N316AD3ST-VB is a high-performance MOSFET that is widely used in a variety of high-efficiency power supplies and control systems, especially for modules with strict power and efficiency requirements.
1. **Power Management System**: ISL9N316AD3ST-VB is widely used in power management modules such as DC-DC converters, chargers and power switches. Its low on-resistance and high current handling capability enable it to effectively reduce energy loss in high-efficiency power supply designs and improve overall system efficiency.
2. **Motor Drive**: In the field of industrial automation, this MOSFET is very suitable for motor control and drive systems. With its high current carrying capacity and fast switching characteristics, ISL9N316AD3ST-VB is an ideal choice for driving various motors and actuators, meeting the needs of high-power applications.
3. **Automotive Electronics**: The device is also suitable for automotive electronic devices such as battery management systems and electric power steering systems. Its voltage resistance and high conductivity enable it to provide stable performance in automotive applications, ensuring the reliability and efficiency of electrical systems.
4. **LED lighting**: ISL9N316AD3ST-VB is suitable for high-efficiency LED lighting drivers, ensuring that LED modules obtain stable current supply, improving the energy efficiency and service life of lighting systems, and is widely used in home, commercial lighting and outdoor lighting.
ISL9N316AD3ST-VB is a high-performance MOSFET that is widely used in a variety of high-efficiency power supplies and control systems, especially for modules with strict power and efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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