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ISL9N308AS3ST-VB Product details
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1. ISL9N308AS3ST-VB Product Introduction
The ISL9N308AS3ST-VB is a high-performance N-channel enhancement-mode power MOSFET in a TO-263 package with a maximum drain-source voltage of 30V, a gate-source voltage rating of ±20V, and a threshold voltage of 1.7V. This MOSFET uses advanced trench technology to provide excellent electrical performance, with an on-resistance of 2.7mΩ at a 4.5V gate drive and 2.4mΩ at a 10V gate drive, supporting up to 98A of continuous drain current. With its low on-resistance and high current capability, the ISL9N308AS3ST-VB is ideal for a variety of power management and switching applications.
The ISL9N308AS3ST-VB is a high-performance N-channel enhancement-mode power MOSFET in a TO-263 package with a maximum drain-source voltage of 30V, a gate-source voltage rating of ±20V, and a threshold voltage of 1.7V. This MOSFET uses advanced trench technology to provide excellent electrical performance, with an on-resistance of 2.7mΩ at a 4.5V gate drive and 2.4mΩ at a 10V gate drive, supporting up to 98A of continuous drain current. With its low on-resistance and high current capability, the ISL9N308AS3ST-VB is ideal for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of ISL9N308AS3ST-VB
| Parameter| Value|
|-----------------------|------------------------------|
| Device type| N-channel MOSFET |
| Package type| TO-263 |
| Maximum drain-source voltage (VDS) | 30V |
| Maximum gate-source voltage (VGS) | ±20V |
| Gate threshold voltage (Vth) | 1.7V |
| On-resistance RDS(ON) @VGS=4.5V | 2.7mΩ |
| On-resistance RDS(ON) @VGS=10V | 2.4mΩ |
| Maximum drain current (ID) | 98A |
| Technology type| Trench technology|
| Maximum power consumption| 45W |
| Operating temperature range| -55°C to 175°C |
| Typical Switching Speed | Fast |
| Parameter| Value|
|-----------------------|------------------------------|
| Device type| N-channel MOSFET |
| Package type| TO-263 |
| Maximum drain-source voltage (VDS) | 30V |
| Maximum gate-source voltage (VGS) | ±20V |
| Gate threshold voltage (Vth) | 1.7V |
| On-resistance RDS(ON) @VGS=4.5V | 2.7mΩ |
| On-resistance RDS(ON) @VGS=10V | 2.4mΩ |
| Maximum drain current (ID) | 98A |
| Technology type| Trench technology|
| Maximum power consumption| 45W |
| Operating temperature range| -55°C to 175°C |
| Typical Switching Speed | Fast |
Domain and module applications：
III. Application fields and module examples
1. **Power management system**
The ISL9N308AS3ST-VB is very suitable for power management modules such as switching power supplies and DC-DC converters. The low on-resistance of this MOSFET ensures high efficiency under high load conditions, which can effectively reduce power losses and improve overall conversion efficiency.
2. **Power tool drive circuit**
In power tools, the ISL9N308AS3ST-VB can be used as a motor drive switch, which can withstand high currents and ensure stable power transmission. This makes it suitable for use in various power tools to improve work efficiency and performance.
3. **Electric vehicle control system**
This MOSFET performs well in the battery management system and motor drive module of electric vehicles. Its high current capability and low on-resistance ensure efficient charging and discharging of the battery, enhancing the overall energy utilization and safety of electric vehicles.
4. **Industrial Automation Applications**
ISL9N308AS3ST-VB is widely used in industrial automation equipment, such as servo motor drive and robot control. Its efficient power switching capability can meet the needs of complex and high-load environments, ensuring the reliability and stability of equipment.
These application scenarios demonstrate the importance of ISL9N308AS3ST-VB in modern electronic and power systems, meeting the needs of various industries for high-efficiency power control.
1. **Power management system**
The ISL9N308AS3ST-VB is very suitable for power management modules such as switching power supplies and DC-DC converters. The low on-resistance of this MOSFET ensures high efficiency under high load conditions, which can effectively reduce power losses and improve overall conversion efficiency.
2. **Power tool drive circuit**
In power tools, the ISL9N308AS3ST-VB can be used as a motor drive switch, which can withstand high currents and ensure stable power transmission. This makes it suitable for use in various power tools to improve work efficiency and performance.
3. **Electric vehicle control system**
This MOSFET performs well in the battery management system and motor drive module of electric vehicles. Its high current capability and low on-resistance ensure efficient charging and discharging of the battery, enhancing the overall energy utilization and safety of electric vehicles.
4. **Industrial Automation Applications**
ISL9N308AS3ST-VB is widely used in industrial automation equipment, such as servo motor drive and robot control. Its efficient power switching capability can meet the needs of complex and high-load environments, ensuring the reliability and stability of equipment.
These application scenarios demonstrate the importance of ISL9N308AS3ST-VB in modern electronic and power systems, meeting the needs of various industries for high-efficiency power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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