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ISL9N307AS3ST-VB Product details
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ISL9N2357D3ST-VB Product Introduction
The ISL9N2357D3ST-VB is a high-efficiency unipolar N-channel MOSFET in a TO252 package, designed for applications requiring lower voltage and high current. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate voltage tolerance is ±20V. It has excellent conduction characteristics and uses trench technology. While providing low on-resistance (RDS(ON)), it ensures a drain current capability of up to 70A, making it suitable for a variety of high-efficiency switching applications.
The ISL9N2357D3ST-VB is a high-efficiency unipolar N-channel MOSFET in a TO252 package, designed for applications requiring lower voltage and high current. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate voltage tolerance is ±20V. It has excellent conduction characteristics and uses trench technology. While providing low on-resistance (RDS(ON)), it ensures a drain current capability of up to 70A, making it suitable for a variety of high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
ISL9N2357D3ST-VB Detailed parameter description
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON)）**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
7. **Maximum drain current (ID)**: 70A
8. **Technology**: Trench MOSFET
9. **Operating frequency**: High-speed switching
10. **Power loss**: Low conduction loss, suitable for high-efficiency conversion circuits
11. **Operating temperature range**: Adapt to wide temperature range application scenarios
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON)）**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
7. **Maximum drain current (ID)**: 70A
8. **Technology**: Trench MOSFET
9. **Operating frequency**: High-speed switching
10. **Power loss**: Low conduction loss, suitable for high-efficiency conversion circuits
11. **Operating temperature range**: Adapt to wide temperature range application scenarios
Domain and module applications：
Applicable fields and module applications
1. **Power management module**: ISL9N2357D3ST-VB is very suitable for DC-DC converters and switching power supplies (SMPS). Its low on-resistance and high current handling capability can effectively improve energy efficiency and reduce heat generation.
2. **Power tools and motor drivers**: In power tools and motor controllers, the 70A current capability and high efficiency of this MOSFET enable it to meet high power requirements and ensure stable operation of the equipment, suitable for various industrial and household applications.
3. **Automotive electronics**: ISL9N2357D3ST-VB can be widely used in automotive power management systems, lighting control and motor drive modules. It can maintain high efficiency performance in harsh environments and ensure the long-term stability of automotive electronic equipment.
4. **Battery management system (BMS)**: This MOSFET is very suitable for battery management and protection circuits, which can effectively control the charging and discharging process and improve the safety and service life of the battery.
5. **Industrial Automation Equipment**: In industrial automation, the ISL9N2357D3ST-VB can be used for robot control and motor drives. With its high efficiency and low conduction loss, it provides stable and reliable support for various automation applications.
Through these applications, the ISL9N2357D3ST-VB demonstrates its strong advantages and wide applicability in the field of low-voltage, high-current switching.
1. **Power management module**: ISL9N2357D3ST-VB is very suitable for DC-DC converters and switching power supplies (SMPS). Its low on-resistance and high current handling capability can effectively improve energy efficiency and reduce heat generation.
2. **Power tools and motor drivers**: In power tools and motor controllers, the 70A current capability and high efficiency of this MOSFET enable it to meet high power requirements and ensure stable operation of the equipment, suitable for various industrial and household applications.
3. **Automotive electronics**: ISL9N2357D3ST-VB can be widely used in automotive power management systems, lighting control and motor drive modules. It can maintain high efficiency performance in harsh environments and ensure the long-term stability of automotive electronic equipment.
4. **Battery management system (BMS)**: This MOSFET is very suitable for battery management and protection circuits, which can effectively control the charging and discharging process and improve the safety and service life of the battery.
5. **Industrial Automation Equipment**: In industrial automation, the ISL9N2357D3ST-VB can be used for robot control and motor drives. With its high efficiency and low conduction loss, it provides stable and reliable support for various automation applications.
Through these applications, the ISL9N2357D3ST-VB demonstrates its strong advantages and wide applicability in the field of low-voltage, high-current switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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